Abstract
The effect of ultra-small well capacity is serverely impacting the performance of image sensors fabricated in advanced complementary metal-oxide-semiconductor (CMOS) technologies. Therefore, a new sensing paradigm is required to effectively design pixels at the nanometer scale. In this paper, we present a noise and quantization model for the multi-bit quanta image sensor (Mb-QIS). Using the model to analyze the Mb-QIS, we found that an optimal exposure exists that can minimize the error in photon counting. This result is useful for the design and operation of Mb-QIS based image acquisition systems.
Original language | English |
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Title of host publication | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
Publisher | IEEE |
Pages | 165-168 |
ISBN (Print) | 9781509018307 |
DOIs | |
Publication status | Published - 15 Dec 2016 |
Event | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016 |
Conference
Conference | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 |
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Country/Territory | Hong Kong |
City | Hong Kong |
Period | 3/08/16 → 5/08/16 |
Funding
This work was funded by the Research Grants Council, grant no.11213515.
Research Keywords
- finite well capacity
- giga pixel camera
- photon counting
- quanta image sensor