Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • W. L. Sarney
  • S. P. Svensson
  • S. V. Novikov
  • W. Walukiewicz
  • M. Ting
  • C. T. Foxon

Detail(s)

Original languageEnglish
Pages (from-to)255-257
Journal / PublicationJournal of Crystal Growth
Volume425
Online published21 Feb 2015
Publication statusPublished - 1 Sep 2015

Abstract

Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition.

Research Area(s)

  • A1. Crystal structure, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys. / Sarney, W. L.; Svensson, S. P.; Novikov, S. V.; Yu, K. M.; Walukiewicz, W.; Ting, M.; Foxon, C. T.

In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 255-257.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review