Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

W. L. Sarney; S. P. Svensson; S. V. Novikov; K. M. Yu; W. Walukiewicz; M. Ting; C. T. Foxon

doi:10.1016/j.jcrysgro.2015.02.065

Author(s)

W. L. Sarney
S. P. Svensson
S. V. Novikov
W. Walukiewicz
M. Ting
C. T. Foxon

Detail(s)

Original language	English
Pages (from-to)	255-257
Journal / Publication	Journal of Crystal Growth
Volume	425
Online published	21 Feb 2015
Publication status	Published - 1 Sept 2015

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2015.02.065 Final Published version
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Document Link	Links https://www.sciencedirect.com/science/article/am/pii/S0022024815001554 Post-print
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84979961198&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(f9f9dfb6-ff9d-414d-bd61-f2fbb7a4f439).html

Abstract

Highly mismatched GaN_1-xSb_x alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition.

Research Area(s)

A1. Crystal structure, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

[ RIS ] [ BibTeX ]

Exploration of the growth parameter space for MBE-grown GaN_1-xSb_x highly mismatched alloys. / Sarney, W. L.; Svensson, S. P.; Novikov, S. V. et al.
In: Journal of Crystal Growth, Vol. 425, 01.09.2015, p. 255-257.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Sarney, WL, Svensson, SP, Novikov, SV, Yu, KM, Walukiewicz, W, Ting, M & Foxon, CT 2015, 'Exploration of the growth parameter space for MBE-grown GaN_1-xSb_x highly mismatched alloys', Journal of Crystal Growth, vol. 425, pp. 255-257. https://doi.org/10.1016/j.jcrysgro.2015.02.065

Sarney, W. L., Svensson, S. P., Novikov, S. V., Yu, K. M., Walukiewicz, W., Ting, M., & Foxon, C. T. (2015). Exploration of the growth parameter space for MBE-grown GaN_1-xSb_x highly mismatched alloys. Journal of Crystal Growth, 425, 255-257. Advance online publication. https://doi.org/10.1016/j.jcrysgro.2015.02.065

Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Ting M et al. Exploration of the growth parameter space for MBE-grown GaN_1-xSb_x highly mismatched alloys. Journal of Crystal Growth. 2015 Sept 1;425:255-257. Epub 2015 Feb 21. doi: 10.1016/j.jcrysgro.2015.02.065

Sarney, W. L. ; Svensson, S. P. ; Novikov, S. V. et al. / Exploration of the growth parameter space for MBE-grown GaN_1-xSb_x highly mismatched alloys. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 255-257.