Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

W. L. Sarney; S. P. Svensson; S. V. Novikov; K. M. Yu; W. Walukiewicz; M. Ting; C. T. Foxon

doi:10.1016/j.jcrysgro.2015.02.065

Exploration of the growth parameter space for MBE-grown GaN_1-xSb_x highly mismatched alloys

W. L. Sarney^*, S. P. Svensson, S. V. Novikov, K. M. Yu, W. Walukiewicz, M. Ting, C. T. Foxon

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

Highly mismatched GaN_1-xSb_x alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier B.V.

Original language	English
Pages (from-to)	255-257
Journal	Journal of Crystal Growth
Volume	425
Online published	21 Feb 2015
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.065
Publication status	Published - 1 Sept 2015

Research Keywords

A1. Crystal structure
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2015.02.065

https://www.sciencedirect.com/science/article/am/pii/S0022024815001554

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Cite this

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title = "Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys",

abstract = "Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier B.V.",

keywords = "A1. Crystal structure, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Sarney, {W. L.} and Svensson, {S. P.} and Novikov, {S. V.} and Yu, {K. M.} and W. Walukiewicz and M. Ting and Foxon, {C. T.}",

year = "2015",

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doi = "10.1016/j.jcrysgro.2015.02.065",

language = "English",

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TY - JOUR

T1 - Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Novikov, S. V.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Ting, M.

AU - Foxon, C. T.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier B.V.

AB - Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition. Published by Elsevier B.V.

KW - A1. Crystal structure

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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U2 - 10.1016/j.jcrysgro.2015.02.065

DO - 10.1016/j.jcrysgro.2015.02.065

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 425

SP - 255

EP - 257

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -