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Exploiting Process Variation for Write Performance Improvement on NAND Flash Memory Storage Systems

  • Liang Shi
  • , Yejia Di
  • , Mengying Zhao
  • , Chun Jason Xue
  • , Kaijie Wu
  • , Edwin H.-M. Sha

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

The write performance of flash memory has been degraded significantly due to the recent density-oriented advancements of flash technology. Techniques have been proposed to improve the write performance by exploiting the varying strength of a flash block in its different worn-out stages. A block is written with a faster speed when it is new and strong, and gradually will be written with slower speeds as it is aging and becomes weak. Motivated by these works, this brief proposes a new technique by exploiting the significant process variation among flash blocks introduced by the advanced technology scaling. First, a write speed detection approach is proposed to identify the strength of each block. Then, a heuristic approach is proposed to exploit the speed variation among blocks for write performance improvement. A series of trace-driven simulations shows that the proposed approach generates substantial write performance improvement over state-of-the-art approaches by 30% on average.
Original languageEnglish
Article number7041199
Pages (from-to)334-337
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume24
Issue number1
DOIs
Publication statusPublished - 1 Jan 2016

Research Keywords

  • Hotness ranks
  • Process Variation (PV)
  • speed groups
  • write performance

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