Exploiting nanostructure-thin film interfaces in advanced sensor device configurations

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Shrawan Jha
  • Hong-En Wang
  • Oleksandr Kutsay
  • Emil V. Jelenković
  • Kevin J. Chen
  • Igor Bello
  • Vladimir Kremnican

Detail(s)

Original languageEnglish
Pages (from-to)757-760
Journal / PublicationVacuum
Volume86
Issue number6
StatePublished - 27 Jan 2012

Abstract

In this report, we present a study on the exploitation of nanostructure-thin film interfaces. Here, the objective is to utilize such interfaces for developing nanostructures for advanced sensing devices, while using state-of-the-art microelectronic technology that enables batch production. In this context, growth of ZnO nanostructures on the GaN/AlGaN heterostructure layers was studied. A fabrication process, based on a hydrothermal growth method, was used for preparing the interfaces of nanostructured thin film. Samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) and obtained results suggested near epitaxial quality of the hetero-interface. Field-effect transistors (FETs) based on ZnO nanorods/GaN heterostructures were fabricated and tested in a controlled gas environment. Thus, it was demonstrated that nanostructures could be exploited in unconventional ways by employing them in scalable and batch-producible conventional semiconductor devices. © 2011 Elsevier Ltd. All rights reserved.

Research Area(s)

  • GaN, Gas sensor, Hetero-interface, Nanostructure integration, ZnO nanorods

Citation Format(s)

Exploiting nanostructure-thin film interfaces in advanced sensor device configurations. / Jha, Shrawan; Wang, Hong-En; Kutsay, Oleksandr; Jelenković, Emil V.; Chen, Kevin J.; Bello, Igor; Kremnican, Vladimir; Zapien, Juan Antonio.

In: Vacuum, Vol. 86, No. 6, 27.01.2012, p. 757-760.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review