Experimental Investigation of Electronic Structure of La(O,F)BiSe2
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 127401 |
| Journal / Publication | Chinese Physics Letters |
| Volume | 33 |
| Issue number | 12 |
| Publication status | Published - 1 Dec 2016 |
| Externally published | Yes |
Link(s)
Abstract
La(O,F)BiSe2 is a layered superconductor and has the same crystal structure with La(O,F)BiS2. We investigate the electronic structure of La(O,F)BiSe2 using the angle-resolved photoemission spectroscopy. Two electron-like Fermi surfaces around X(π, 0) are observed, corresponding to the electron doping of 0.23 per Bi site. We clearly resolve anisotropic band splitting along both γ-Xand M-X due to the cooperative effects of large spin-orbit coupling and interlayer coupling. Moreover, we observe an almost non-dispersive electronic state around -0.2 eV between the electron-like bands. This state vanishes after in-situ K evaporation, indicating that it could be the localized surface state caused by defects on the cleaved surface.
Bibliographic Note
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Citation Format(s)
Experimental Investigation of Electronic Structure of La(O,F)BiSe2. / Ma, Jun; Fu, Bin-Bin; Ma, Jun-Zhang et al.
In: Chinese Physics Letters, Vol. 33, No. 12, 127401, 01.12.2016.
In: Chinese Physics Letters, Vol. 33, No. 12, 127401, 01.12.2016.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
