Experimental Investigation of Electronic Structure of La(O,F)BiSe2

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jun Ma
  • Bin-Bin Fu
  • Ling-Yuan Kong
  • Di Chen
  • Ji-Feng Shao
  • Chang-Jin Zhang
  • Tian Qian
  • Yu-Heng Zhang
  • Hong Ding

Detail(s)

Original languageEnglish
Article number127401
Journal / PublicationChinese Physics Letters
Volume33
Issue number12
Publication statusPublished - 1 Dec 2016
Externally publishedYes

Abstract

La(O,F)BiSe2 is a layered superconductor and has the same crystal structure with La(O,F)BiS2. We investigate the electronic structure of La(O,F)BiSe2 using the angle-resolved photoemission spectroscopy. Two electron-like Fermi surfaces around X(π, 0) are observed, corresponding to the electron doping of 0.23 per Bi site. We clearly resolve anisotropic band splitting along both γ-Xand M-X due to the cooperative effects of large spin-orbit coupling and interlayer coupling. Moreover, we observe an almost non-dispersive electronic state around -0.2 eV between the electron-like bands. This state vanishes after in-situ K evaporation, indicating that it could be the localized surface state caused by defects on the cleaved surface.

Bibliographic Note

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Citation Format(s)

Experimental Investigation of Electronic Structure of La(O,F)BiSe2. / Ma, Jun; Fu, Bin-Bin; Ma, Jun-Zhang; Kong, Ling-Yuan; Chen, Di; Shao, Ji-Feng; Zhang, Chang-Jin; Qian, Tian; Zhang, Yu-Heng; Ding, Hong.

In: Chinese Physics Letters, Vol. 33, No. 12, 127401, 01.12.2016.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review