Abstract
The composition dependence of the electrical properties of Cu 2ZnSnSe 4 thin films synthesized by coevaporation and the results of phase analyses are reported. We found that the hole concentration depends on the Cu/(Zn Sn) ratio and is on the order of 10 17 cm -3 for the ratio of 0.7 and increases to over 10 20 cm -3 when the ratio exceeds 0.9. Raman spectra indicate the coexistence of semimetallic Cu 2Se second phase in the thin films with Cu/(Zn Sn) ratio above 0.9. In order to remove the Cu 2Se phase selectively, we attempted a KCN etching. After the KCN etching for 30 min, the Raman peak attributed to the Cu 2Se phase disappeared, and the hole concentration decreased to about 10 18 cm -3. © 2012 American Institute of Physics.
Original language | English |
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Article number | 53522 |
Journal | Journal of Applied Physics |
Volume | 111 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Mar 2012 |
Externally published | Yes |