Existence and removal of Cu 2Se second phase in coevaporated Cu 2ZnSnSe 4 thin films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Tooru Tanaka
  • Tatsuya Sueishi
  • Katsuhiko Saito
  • Qixin Guo
  • Mitsuhiro Nishio
  • Wladek Walukiewicz

Detail(s)

Original languageEnglish
Article number53522
Journal / PublicationJournal of Applied Physics
Volume111
Issue number5
Publication statusPublished - 1 Mar 2012
Externally publishedYes

Abstract

The composition dependence of the electrical properties of Cu 2ZnSnSe 4 thin films synthesized by coevaporation and the results of phase analyses are reported. We found that the hole concentration depends on the Cu/(Zn Sn) ratio and is on the order of 10 17 cm -3 for the ratio of 0.7 and increases to over 10 20 cm -3 when the ratio exceeds 0.9. Raman spectra indicate the coexistence of semimetallic Cu 2Se second phase in the thin films with Cu/(Zn Sn) ratio above 0.9. In order to remove the Cu 2Se phase selectively, we attempted a KCN etching. After the KCN etching for 30 min, the Raman peak attributed to the Cu 2Se phase disappeared, and the hole concentration decreased to about 10 18 cm -3. © 2012 American Institute of Physics.

Citation Format(s)

Existence and removal of Cu 2Se second phase in coevaporated Cu 2ZnSnSe 4 thin films. / Tanaka, Tooru; Sueishi, Tatsuya; Saito, Katsuhiko; Guo, Qixin; Nishio, Mitsuhiro; Yu, Kin M.; Walukiewicz, Wladek.

In: Journal of Applied Physics, Vol. 111, No. 5, 53522, 01.03.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal