Abstract
The metal-decorated nanocavities in Si were discussed using EXAFS measurements. A sample preparation methodology to enable the identification with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates was elaborated. The preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities were also presented.
| Original language | English |
|---|---|
| Pages (from-to) | 179-184 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 199 |
| DOIs | |
| Publication status | Published - Jan 2003 |
| Externally published | Yes |
Research Keywords
- Cavities
- EXAFS
- Gettering
- Silicon
- Voids