EXAFS measurements of metal-decorated nanocavities in Si

G. de M. Azevedo, M. C. Ridgway, J. Betlehem, K. M. Yu, C. J. Glover, G. J. Foran

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

1 Citation (Scopus)

Abstract

The metal-decorated nanocavities in Si were discussed using EXAFS measurements. A sample preparation methodology to enable the identification with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates was elaborated. The preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities were also presented.
Original languageEnglish
Pages (from-to)179-184
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume199
DOIs
Publication statusPublished - Jan 2003
Externally publishedYes

Research Keywords

  • Cavities
  • EXAFS
  • Gettering
  • Silicon
  • Voids

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