Evolution of structural order in germanium ion-implanted amorphous silicon layers

S. L. Cheng; H. H. Lin; J. H. He; T. F. Chiang; C. H. Yu; L. J. Chen; C. K. Yang; D. Y. Wu; S. C. Chien; W. C. Chen

doi:10.1063/1.1486256

Evolution of structural order in germanium ion-implanted amorphous silicon layers

S. L. Cheng, H. H. Lin, J. H. He, T. F. Chiang, C. H. Yu, L. J. Chen, C. K. Yang, D. Y. Wu, S. C. Chien, W. C. Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

18 Citations (Scopus)

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	910-913
Journal	Journal of Applied Physics
Volume	92
Issue number	2
Online published	28 Jun 2002
DOIs	https://doi.org/10.1063/1.1486256
Publication status	Published - 15 Jul 2002
Externally published	Yes

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title = "Evolution of structural order in germanium ion-implanted amorphous silicon layers",

abstract = "High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. {\textcopyright} 2002 American Institute of Physics.",

author = "Cheng, {S. L.} and Lin, {H. H.} and He, {J. H.} and Chiang, {T. F.} and Yu, {C. H.} and Chen, {L. J.} and Yang, {C. K.} and Wu, {D. Y.} and Chien, {S. C.} and Chen, {W. C.}",

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T1 - Evolution of structural order in germanium ion-implanted amorphous silicon layers

AU - Cheng, S. L.

AU - Lin, H. H.

AU - He, J. H.

AU - Chiang, T. F.

AU - Yu, C. H.

AU - Chen, L. J.

AU - Yang, C. K.

AU - Wu, D. Y.

AU - Chien, S. C.

AU - Chen, W. C.

PY - 2002/7/15

Y1 - 2002/7/15

N2 - High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.

AB - High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.

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U2 - 10.1063/1.1486256

DO - 10.1063/1.1486256

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 92

SP - 910

EP - 913

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Evolution of structural order in germanium ion-implanted amorphous silicon layers

Abstract

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