Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Guo-Liang Yuan; Junling Wang

doi:10.1063/1.3268783

Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Guo-Liang Yuan
, Junling Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

74 Citations (Scopus)

Abstract

Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. © 2009 American Institute of Physics.

Original language	English
Article number	252904
Journal	Applied Physics Letters
Volume	95
Issue number	25
DOIs	https://doi.org/10.1063/1.3268783
Publication status	Published - 2009
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Evidences for the depletion region induced by the polarization of ferroelectric semiconductors",

abstract = "Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. {\textcopyright} 2009 American Institute of Physics.",

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AU - Wang, Junling

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N2 - Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. © 2009 American Institute of Physics.

AB - Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. © 2009 American Institute of Physics.

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DO - 10.1063/1.3268783

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252904

ER -

Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Abstract

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