Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

Guo-Liang Yuan; Junling Wang

doi:10.1063/1.3268783

Author(s)

Guo-Liang Yuan
Junling Wang

Detail(s)

Original language	English
Article number	252904
Journal / Publication	Applied Physics Letters
Volume	95
Issue number	25
Publication status	Published - 2009
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.3268783 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-73449098911&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(5e4aa271-e318-416c-9d34-67027058c87d).html

Abstract

Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. © 2009 American Institute of Physics.

Research Area(s)

SDG 7 - Affordable and Clean Energy

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

[ RIS ] [ BibTeX ]

Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. / Yuan, Guo-Liang; Wang, Junling.
In: Applied Physics Letters, Vol. 95, No. 25, 252904, 2009.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Yuan, G-L & Wang, J 2009, 'Evidences for the depletion region induced by the polarization of ferroelectric semiconductors', Applied Physics Letters, vol. 95, no. 25, 252904. https://doi.org/10.1063/1.3268783

Yuan, G.-L., & Wang, J. (2009). Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. Applied Physics Letters, 95(25), Article 252904. https://doi.org/10.1063/1.3268783

Yuan GL, Wang J. Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. Applied Physics Letters. 2009;95(25):252904. doi: 10.1063/1.3268783

Yuan, Guo-Liang ; Wang, Junling. / Evidences for the depletion region induced by the polarization of ferroelectric semiconductors. In: Applied Physics Letters. 2009 ; Vol. 95, No. 25.