Abstract
Scanning tunneling microscopy (STM) is performed to study the formation mechanism of graphene on 6H-SiC by thermal decomposition in situ and the evolution of an atomically resolved 6 × 6 structure in the buffer layer is revealed. The long-range order of the 6 × 6 structure is maintained during growth, but the short-range arrangement changes with temperature. Based on STM images acquired at different voltages, a structure consisting of triangular silicon clusters with the 6 × 6 structure and filled by amorphous carbon atoms is proposed. The 6 × 6 silicon clusters serve as the template and amorphous carbon atoms provide the carbon source for graphene growth. © 2013 AIP Publishing LLC.
| Original language | English |
|---|---|
| Article number | 171910 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 29 Apr 2013 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in T. W. Hu, F. Ma, D. Y. Ma, D. Yang, X. T. Liu, K. W. Xu, and Paul K. Chu , "Evidence of atomically resolved 6×6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition", Appl. Phys. Lett. 102, 171910 (2013) and may be found at https://doi.org/10.1063/1.4804290.
Fingerprint
Dive into the research topics of 'Evidence of atomically resolved 6 × 6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver