Evidence for topological edge states in a large energy gap near the step edges on the surface of ZrTe5

R. Wu, J. Z. Ma, S. M. Nie, L. X. Zhao, X. Huang, J. X. Yin, B. B. Fu, P. Richard, G. F. Chen, Z. Fang, X. Dai, H. M. Weng*, T. Qian*, H. Ding, S. H. Pan*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Abstract

Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe5 crystal hosts a large full gap of ~100 meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states.
Original languageEnglish
Article number021017
JournalPhysical Review X
Volume6
Issue number2
DOIs
Publication statusPublished - 2016
Externally publishedYes

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