Evidence for Primal sp2 Defects at the Diamond Surface : Candidates for Electron Trapping and Noise Sources

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Alastair Stacey
  • Nikolai Dontschuk
  • Jyh-Pin Chou
  • David A. Broadway
  • Alex K. Schenk
  • And 9 others
  • Michael J. Sear
  • Jean-Philippe Tetienne
  • Alon Hoffman
  • Steven Prawer
  • Chris I. Pakes
  • Anton Tadich
  • Nathalie P. de Leon
  • Adam Gali
  • Lloyd C. L. Hollenberg

Detail(s)

Original languageEnglish
Article number1801449
Journal / PublicationAdvanced Materials Interfaces
Volume6
Issue number3
Online published3 Dec 2018
Publication statusPublished - 8 Feb 2019
Externally publishedYes

Abstract

Many advanced applications of diamond materials are now being limited by unknown surface defects, including in the fields of high power/frequency electronics and quantum computing and quantum sensing. Of acute interest to diamond researchers worldwide is the loss of quantum coherence in near-surface nitrogen-vacancy (NV) centers and the generation of associated magnetic noise at the diamond surface. Here for the first time is presented the observation of a family of primal diamond surface defects, which is suggested as the leading cause of band-bending and Fermi-pinning phenomena in diamond devices. A combination of density functional theory and synchrotron-based X-ray absorption spectroscopy is used to show that these defects introduce low-lying electronic trap states. The effect of these states is modeled on band-bending into the diamond bulk and it is shown that the properties of the important NV defect centers are affected by these defects. Due to the paramount importance of near-surface NV center properties in a growing number of fields, the density of these defects is further quantified at the surface of a variety of differently-treated device surfaces, consistent with best-practice processing techniques in the literature. The identification and characterization of these defects has wide-ranging implications for diamond devices across many fields.

Research Area(s)

  • defects, diamond, Fermi-level pinning, NEXAFS, surfaces

Citation Format(s)

Evidence for Primal sp2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources. / Stacey, Alastair; Dontschuk, Nikolai; Chou, Jyh-Pin et al.
In: Advanced Materials Interfaces, Vol. 6, No. 3, 1801449, 08.02.2019.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review