Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon : A transient photocurrent analysis

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • D. P. Webb
  • X. C. Zou
  • Y. W. Lam
  • S. H. Lin
  • X. Y. Lin
  • K. X. Lin
  • S. K. O'Leary
  • P. K. Lim

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)239-242
Journal / PublicationSolid State Communications
Volume105
Issue number4
Publication statusPublished - Jan 1998

Abstract

We employ transient photocurrent decay measurements to determine the distribution of conduction band tail states in hydrogenated amorphous silicon. It is found that these experimental results suggest the possibility of deviations from a single-exponential functional form. This is consistent with other more recent experimental determinations of the distribution of conduction band tail states in hydrogenated amorphous silicon. © 1997 Elsevier Science Ltd.

Research Area(s)

  • A. disordered systems, A. semiconductors, A. thin films, D. electronic states

Citation Format(s)

Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon : A transient photocurrent analysis. / Webb, D. P.; Zou, X. C.; Chan, Y. C.; Lam, Y. W.; Lin, S. H.; Lin, X. Y.; Lin, K. X.; O'Leary, S. K.; Lim, P. K.

In: Solid State Communications, Vol. 105, No. 4, 01.1998, p. 239-242.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review