Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon : A transient photocurrent analysis
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 239-242 |
| Journal / Publication | Solid State Communications |
| Volume | 105 |
| Issue number | 4 |
| Publication status | Published - Jan 1998 |
Link(s)
Abstract
We employ transient photocurrent decay measurements to determine the distribution of conduction band tail states in hydrogenated amorphous silicon. It is found that these experimental results suggest the possibility of deviations from a single-exponential functional form. This is consistent with other more recent experimental determinations of the distribution of conduction band tail states in hydrogenated amorphous silicon. © 1997 Elsevier Science Ltd.
Research Area(s)
- A. disordered systems, A. semiconductors, A. thin films, D. electronic states
Citation Format(s)
Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon : A transient photocurrent analysis. / Webb, D. P.; Zou, X. C.; Chan, Y. C.; Lam, Y. W.; Lin, S. H.; Lin, X. Y.; Lin, K. X.; O'Leary, S. K.; Lim, P. K.
In: Solid State Communications, Vol. 105, No. 4, 01.1998, p. 239-242.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
