Evaluation of structure-property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

Chang-Zhi Li; Chu-Chen Chueh; Hin-Lap Yip; Jingyu Zou; Wen-Chang Chen; Alex K.-Y. Jen

doi:10.1039/c2jm32693k

Evaluation of structure-property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

Chang-Zhi Li
, Chu-Chen Chueh
, Hin-Lap Yip
, Jingyu Zou
, Wen-Chang Chen
, Alex K.-Y. Jen^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

51 Citations (Scopus)

Abstract

A series of fullerene acceptors have been selected for the systematic study of their electron-transporting properties on a standardized field-effect transistor (FET) platform. It was found that small structural alternations, functional patterns, and number of addends on fullerene derivatives strongly affect their mobilities. The measured charge mobilities correlate well with structural features of these materials and provide useful insights into designing better fullerene-based semiconductors for organic electronics. © The Royal Society of Chemistry 2012.

Original language	English
Pages (from-to)	14976-14981
Journal	Journal of Materials Chemistry
Volume	22
Issue number	30
Online published	31 May 2012
DOIs	https://doi.org/10.1039/c2jm32693k
Publication status	Published - 14 Aug 2012
Externally published	Yes

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@article{50a1258c9a7f48a8b52e7130cd2f6911,

title = "Evaluation of structure-property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance",

abstract = "A series of fullerene acceptors have been selected for the systematic study of their electron-transporting properties on a standardized field-effect transistor (FET) platform. It was found that small structural alternations, functional patterns, and number of addends on fullerene derivatives strongly affect their mobilities. The measured charge mobilities correlate well with structural features of these materials and provide useful insights into designing better fullerene-based semiconductors for organic electronics. {\textcopyright} The Royal Society of Chemistry 2012.",

author = "Chang-Zhi Li and Chu-Chen Chueh and Hin-Lap Yip and Jingyu Zou and Wen-Chang Chen and Jen, \{Alex K.-Y.\}",

year = "2012",

month = aug,

day = "14",

doi = "10.1039/c2jm32693k",

language = "English",

volume = "22",

pages = "14976--14981",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "30",

}

Evaluation of structure-property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance. / Li, Chang-Zhi; Chueh, Chu-Chen; Yip, Hin-Lap et al.
In: Journal of Materials Chemistry, Vol. 22, No. 30, 14.08.2012, p. 14976-14981.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Evaluation of structure-property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

AU - Li, Chang-Zhi

AU - Chueh, Chu-Chen

AU - Yip, Hin-Lap

AU - Zou, Jingyu

AU - Chen, Wen-Chang

AU - Jen, Alex K.-Y.

PY - 2012/8/14

Y1 - 2012/8/14

N2 - A series of fullerene acceptors have been selected for the systematic study of their electron-transporting properties on a standardized field-effect transistor (FET) platform. It was found that small structural alternations, functional patterns, and number of addends on fullerene derivatives strongly affect their mobilities. The measured charge mobilities correlate well with structural features of these materials and provide useful insights into designing better fullerene-based semiconductors for organic electronics. © The Royal Society of Chemistry 2012.

AB - A series of fullerene acceptors have been selected for the systematic study of their electron-transporting properties on a standardized field-effect transistor (FET) platform. It was found that small structural alternations, functional patterns, and number of addends on fullerene derivatives strongly affect their mobilities. The measured charge mobilities correlate well with structural features of these materials and provide useful insights into designing better fullerene-based semiconductors for organic electronics. © The Royal Society of Chemistry 2012.

UR - https://www.scopus.com/pages/publications/84863944259

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84863944259&origin=recordpage

U2 - 10.1039/c2jm32693k

DO - 10.1039/c2jm32693k

M3 - RGC 21 - Publication in refereed journal

SN - 0959-9428

VL - 22

SP - 14976

EP - 14981

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 30

ER -

Evaluation of structure-property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

Abstract

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