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Etch-hole-assisted energy dispersion for enhancing quality factor in silicon bulk acoustic resonators

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

This paper empirically demonstrates how the quality factor (Q) of a width-extensional mode single-crystal silicon bulk-acoustic-resonator (SiBAR) can be enhanced by three times by strategic placement of holes on the structure. The holes serve to disperse the strain energy field concentrated primarily around the nodal lines, ultimately re-distributing strain energy away from the anchors. This in turn reduces anchor loss and thus enhances Q. These results agree well with our finite-element (FE) simulations. We envisage that the concepts reported herein can be extended to even higher performance resonators like piezoelectric aluminum nitride contour mode resonators. © 2014 IEEE.
Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
PublisherIEEE
Pages1257-1260
ISBN (Print)9781479935086
DOIs
Publication statusPublished - 2014
Event27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 - San Francisco, United States
Duration: 26 Jan 2014 → 30 Jan 2014
https://ieeexplore.ieee.org/xpl/conhome/6749560/proceeding

Publication series

Name
ISSN (Print)1084-6999

Conference

Conference27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
PlaceUnited States
CitySan Francisco
Period26/01/14 → 30/01/14
Internet address

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