Abstract
This paper empirically demonstrates how the quality factor (Q) of a width-extensional mode single-crystal silicon bulk-acoustic-resonator (SiBAR) can be enhanced by three times by strategic placement of holes on the structure. The holes serve to disperse the strain energy field concentrated primarily around the nodal lines, ultimately re-distributing strain energy away from the anchors. This in turn reduces anchor loss and thus enhances Q. These results agree well with our finite-element (FE) simulations. We envisage that the concepts reported herein can be extended to even higher performance resonators like piezoelectric aluminum nitride contour mode resonators. © 2014 IEEE.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
| Publisher | IEEE |
| Pages | 1257-1260 |
| ISBN (Print) | 9781479935086 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 - San Francisco, United States Duration: 26 Jan 2014 → 30 Jan 2014 https://ieeexplore.ieee.org/xpl/conhome/6749560/proceeding |
Publication series
| Name | |
|---|---|
| ISSN (Print) | 1084-6999 |
Conference
| Conference | 27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 |
|---|---|
| Place | United States |
| City | San Francisco |
| Period | 26/01/14 → 30/01/14 |
| Internet address |
Fingerprint
Dive into the research topics of 'Etch-hole-assisted energy dispersion for enhancing quality factor in silicon bulk acoustic resonators'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver