Error model guided joint performance and endurance optimization for flash memory

Liang Shi, Keni Qiu, Mengying Zhao, Chun Jason Xue

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

17 Citations (Scopus)

Abstract

As flash memory has better performance than hard disks, it has been widely applied in embedded systems, personal computers, and data centers as storage components. However, endurance and write performance are the two key challenges in the deployment of flash memory. In this paper, with the awareness of errors induced from write operations, endurance, and retention time, a stage-based optimization approach is proposed to improve the write performance and endurance at different usage stages of flash memory. A series of trace-driven simulations show that the proposed approach outperforms a set of state-of-the-art approaches in terms of write performance and lifetime.
Original languageEnglish
Article number6740049
Pages (from-to)343-355
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume33
Issue number3
DOIs
Publication statusPublished - Mar 2014

Research Keywords

  • Endurance error
  • error model
  • retention error
  • smart refresh
  • stage optimization
  • write error

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