Erratum: A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications (Journal of Applied Physics (2019) 125 (082520) DOI : 10.1063/1.5052718)

Research output: Journal Publications and ReviewsErratum

Research Output

  1. 2019
  2. Published

    A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

    Li, S., Chou, J., Zhang, H., Lu, Y. & Hu, A., 28 Feb 2019, In: Journal of Applied Physics. 125, 8, 082520.

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 13
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