Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  • Jian-Wei Lo
  • Wei-Cheng Lien
  • Chin-An Lin
  • Jr-Hau He


Original languageEnglish
Pages (from-to)1009-1014
Journal / PublicationACS Applied Materials and Interfaces
Issue number4
Online published1 Apr 2011
Publication statusPublished - 27 Apr 2011
Externally publishedYes


Single-crystalline Er-doped ZnO nanorod arrays (NRAs) on Ag island films with appropriate annealing show a promising enhancement of 1540 nm emission for optical communication. The enhanced 1540 nm emission of Er-doped ZnO NRAs is attributed to the enhancement of the deep level emission of ZnO host. In an effort to enhance deep level emission to pump Er3+ emission at 1540 nm in the Er-doped ZnO NRAs, surface plasmon coupling and increase in deep level states were carried out via Ag island films and high-temperature annealing. This study points to the effective methods to enhance 1540 nm emission, demonstrating that ZnO NRAs with Ag islands have a promising potential for the application in optical communications.

Research Area(s)

  • Er+3 emission, nanorod, nanowire, ZnO