Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing

Jian-Wei Lo; Wei-Cheng Lien; Chin-An Lin; Jr-Hau He

doi:10.1021/am101031f

Author(s)

Jian-Wei Lo
Wei-Cheng Lien
Chin-An Lin
Jr-Hau He

Detail(s)

Original language	English
Pages (from-to)	1009-1014
Journal / Publication	ACS Applied Materials and Interfaces
Volume	3
Issue number	4
Online published	1 Apr 2011
Publication status	Published - 27 Apr 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1021/am101031f Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84862832976&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(8fdae387-5c25-4fe6-abb6-00af14316a92).html

Abstract

Single-crystalline Er-doped ZnO nanorod arrays (NRAs) on Ag island films with appropriate annealing show a promising enhancement of 1540 nm emission for optical communication. The enhanced 1540 nm emission of Er-doped ZnO NRAs is attributed to the enhancement of the deep level emission of ZnO host. In an effort to enhance deep level emission to pump Er³⁺ emission at 1540 nm in the Er-doped ZnO NRAs, surface plasmon coupling and increase in deep level states were carried out via Ag island films and high-temperature annealing. This study points to the effective methods to enhance 1540 nm emission, demonstrating that ZnO NRAs with Ag islands have a promising potential for the application in optical communications.

Research Area(s)

Er+3 emission, nanorod, nanowire, ZnO

Citation Format(s)

[ RIS ] [ BibTeX ]

Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing. / Lo, Jian-Wei; Lien, Wei-Cheng; Lin, Chin-An et al.

In: ACS Applied Materials and Interfaces, Vol. 3, No. 4, 27.04.2011, p. 1009-1014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Lo, J-W, Lien, W-C, Lin, C-A & He, J-H 2011, 'Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing', ACS Applied Materials and Interfaces, vol. 3, no. 4, pp. 1009-1014. https://doi.org/10.1021/am101031f

Lo, J-W., Lien, W-C., Lin, C-A., & He, J-H. (2011). Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing. ACS Applied Materials and Interfaces, 3(4), 1009-1014. https://doi.org/10.1021/am101031f

Lo J-W, Lien W-C, Lin C-A, He J-H. Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing. ACS Applied Materials and Interfaces. 2011 Apr 27;3(4):1009-1014. Epub 2011 Apr 1. doi: 10.1021/am101031f

Lo, Jian-Wei ; Lien, Wei-Cheng ; Lin, Chin-An et al. / Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission by Employing Ag Island Films and High-Temperature Annealing. In: ACS Applied Materials and Interfaces. 2011 ; Vol. 3, No. 4. pp. 1009-1014.