Erbium doping in silicon by thermal indiffusion

Emile Man Wah Wong; Hongwei Liu; Shi Qing Man; Edwin Yue Bun Pun; Po Sheun Chung

doi:10.1143/jjap.37.3669

Erbium doping in silicon by thermal indiffusion

Emile Man Wah Wong, Hongwei Liu, Shi Qing Man, Edwin Yue Bun Pun, Po Sheun Chung

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb₂O₃) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

Original language	English
Pages (from-to)	3669-3672
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	6 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.3669
Publication status	Published - Jun 1998

Research Keywords

Erbium
Photoluminescence
Rare-earth ion
Silicon
Thermal indiffusion

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title = "Erbium doping in silicon by thermal indiffusion",

abstract = "A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.",

keywords = "Erbium, Photoluminescence, Rare-earth ion, Silicon, Thermal indiffusion",

author = "Wong, {Emile Man Wah} and Hongwei Liu and Man, {Shi Qing} and Pun, {Edwin Yue Bun} and Chung, {Po Sheun}",

year = "1998",

month = jun,

doi = "10.1143/jjap.37.3669",

language = "English",

volume = "37",

pages = "3669--3672",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 SUPPL. B",

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TY - JOUR

T1 - Erbium doping in silicon by thermal indiffusion

AU - Wong, Emile Man Wah

AU - Liu, Hongwei

AU - Man, Shi Qing

AU - Pun, Edwin Yue Bun

AU - Chung, Po Sheun

PY - 1998/6

Y1 - 1998/6

N2 - A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

AB - A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

KW - Erbium

KW - Photoluminescence

KW - Rare-earth ion

KW - Silicon

KW - Thermal indiffusion

UR - http://www.scopus.com/inward/record.url?scp=0032093407&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032093407&origin=recordpage

U2 - 10.1143/jjap.37.3669

DO - 10.1143/jjap.37.3669

M3 - RGC 21 - Publication in refereed journal

SN - 0021-4922

VL - 37

SP - 3669

EP - 3672

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6 SUPPL. B

ER -

Erbium doping in silicon by thermal indiffusion

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