Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Detail(s)

Original languageEnglish
Article number8907889
Pages (from-to)87-90
Journal / PublicationIEEE Electron Device Letters
Volume41
Issue number1
Online published20 Nov 2019
Publication statusPublished - Jan 2020

Abstract

We propose an equivalent circuit for a quantum-dot LED (QLED), where the resistances and the capacitances are expressed in terms of the physical parameters of the QLED. The validity of the equivalent circuit is verified by measurement results. From the measured frequency response of the QLED and the calculated frequency response of the equivalent circuit, we are able to deduce the carrier lifetime in the active layer of the QLED. The availability of the equivalent circuit can facilitate the analysis of the electrical characteristics of QLEDs.

Research Area(s)

  • carrier lifetime, equivalent circuit, frequency response, Quantum-dot light-emitting diode