Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

Hua Xiao; Kai Wang; Rui Wang; Wanli Chen; Kin Seng Chiang

doi:10.1109/LED.2019.2954326

Author(s)

Hua Xiao
Kai Wang
Rui Wang
Wanli Chen
Kin Seng Chiang

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Article number	8907889
Pages (from-to)	87-90
Journal / Publication	IEEE Electron Device Letters
Volume	41
Issue number	1
Online published	20 Nov 2019
Publication status	Published - Jan 2020

Link(s)

DOI	DOI https://doi.org/10.1109/LED.2019.2954326 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85077779632&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(1f97956f-c2d1-478c-8be6-3bf84cc99938).html

Abstract

We propose an equivalent circuit for a quantum-dot LED (QLED), where the resistances and the capacitances are expressed in terms of the physical parameters of the QLED. The validity of the equivalent circuit is verified by measurement results. From the measured frequency response of the QLED and the calculated frequency response of the equivalent circuit, we are able to deduce the carrier lifetime in the active layer of the QLED. The availability of the equivalent circuit can facilitate the analysis of the electrical characteristics of QLEDs.

Research Area(s)

carrier lifetime, equivalent circuit, frequency response, Quantum-dot light-emitting diode

Citation Format(s)

[ RIS ] [ BibTeX ]

Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer. / Xiao, Hua; Wang, Kai; Wang, Rui et al.
In: IEEE Electron Device Letters, Vol. 41, No. 1, 8907889, 01.2020, p. 87-90.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Xiao, H, Wang, K, Wang, R, Chen, W & Chiang, KS 2020, 'Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer', IEEE Electron Device Letters, vol. 41, no. 1, 8907889, pp. 87-90. https://doi.org/10.1109/LED.2019.2954326

Xiao, H., Wang, K., Wang, R., Chen, W., & Chiang, K. S. (2020). Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer. IEEE Electron Device Letters, 41(1), 87-90. Article 8907889. https://doi.org/10.1109/LED.2019.2954326

Xiao H, Wang K, Wang R, Chen W, Chiang KS. Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer. IEEE Electron Device Letters. 2020 Jan;41(1):87-90. 8907889. Epub 2019 Nov 20. doi: 10.1109/LED.2019.2954326

Xiao, Hua ; Wang, Kai ; Wang, Rui et al. / Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer. In: IEEE Electron Device Letters. 2020 ; Vol. 41, No. 1. pp. 87-90.