Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

Hua Xiao; Kai Wang; Rui Wang; Wanli Chen; Kin Seng Chiang

doi:10.1109/LED.2019.2954326

Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

Hua Xiao
, Kai Wang^*
, Rui Wang^*
, Wanli Chen
, Kin Seng Chiang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

We propose an equivalent circuit for a quantum-dot LED (QLED), where the resistances and the capacitances are expressed in terms of the physical parameters of the QLED. The validity of the equivalent circuit is verified by measurement results. From the measured frequency response of the QLED and the calculated frequency response of the equivalent circuit, we are able to deduce the carrier lifetime in the active layer of the QLED. The availability of the equivalent circuit can facilitate the analysis of the electrical characteristics of QLEDs.

Original language	English
Article number	8907889
Pages (from-to)	87-90
Journal	IEEE Electron Device Letters
Volume	41
Issue number	1
Online published	20 Nov 2019
DOIs	https://doi.org/10.1109/LED.2019.2954326
Publication status	Published - Jan 2020

Research Keywords

carrier lifetime
equivalent circuit
frequency response
Quantum-dot light-emitting diode

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abstract = "We propose an equivalent circuit for a quantum-dot LED (QLED), where the resistances and the capacitances are expressed in terms of the physical parameters of the QLED. The validity of the equivalent circuit is verified by measurement results. From the measured frequency response of the QLED and the calculated frequency response of the equivalent circuit, we are able to deduce the carrier lifetime in the active layer of the QLED. The availability of the equivalent circuit can facilitate the analysis of the electrical characteristics of QLEDs.",

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T1 - Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

AU - Xiao, Hua

AU - Wang, Kai

AU - Wang, Rui

AU - Chen, Wanli

AU - Chiang, Kin Seng

PY - 2020/1

Y1 - 2020/1

N2 - We propose an equivalent circuit for a quantum-dot LED (QLED), where the resistances and the capacitances are expressed in terms of the physical parameters of the QLED. The validity of the equivalent circuit is verified by measurement results. From the measured frequency response of the QLED and the calculated frequency response of the equivalent circuit, we are able to deduce the carrier lifetime in the active layer of the QLED. The availability of the equivalent circuit can facilitate the analysis of the electrical characteristics of QLEDs.

AB - We propose an equivalent circuit for a quantum-dot LED (QLED), where the resistances and the capacitances are expressed in terms of the physical parameters of the QLED. The validity of the equivalent circuit is verified by measurement results. From the measured frequency response of the QLED and the calculated frequency response of the equivalent circuit, we are able to deduce the carrier lifetime in the active layer of the QLED. The availability of the equivalent circuit can facilitate the analysis of the electrical characteristics of QLEDs.

KW - carrier lifetime

KW - equivalent circuit

KW - frequency response

KW - Quantum-dot light-emitting diode

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85077779632&origin=recordpage

U2 - 10.1109/LED.2019.2954326

DO - 10.1109/LED.2019.2954326

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 41

SP - 87

EP - 90

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 8907889

ER -

Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

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Research Keywords

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