Epitaxy on diamond by chemical vapor deposition : A route to high-quality cubic boron nitride for electronic applications

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

  • Igor Bello
  • Yeshayahu Lifshitz
  • Ka Man Chan
  • Xiangmin Meng
  • Yu Wu
  • Chit Yiu Chan
  • Shui-Tong Lee

Related Research Unit(s)

Detail(s)

Original languageEnglish
Journal / PublicationAdvanced Materials
Volume16
Issue number16
Publication statusPublished - 18 Aug 2004

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-19444367304&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(e49ab8ae-0da3-45d2-bf02-4eff223527d9).html

Abstract

Heteroepitaxial growth of cubic boron nitride (cBN) on diamond using fluorine-assisted chemical vapor deposition is reported. Since cBN grown on diamond shows extraordinary film adhesion and stability, diamond serves as a universal intermediate layer for growing cBN films on a host of materials. The Figure illustrates the heteroepitaxial relationship between the interfacing materials, i.e, cBN-diamond and diamond-silicon.

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Publication fingerprints text

100
Diamond Material Science
100
Chemical Vapor Depo... Material Science
100
Cubic Boron Nitride Material Science
100
Epitaxy Material Science
100
Vapor Deposition Engineering
33
Film Material Science
16
Silicon Material Science
16
Illustrates Engineering
16
Assisted Chemical V... Engineering
16
Intermediate Layer Engineering
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Citation Format(s)

[ RIS ] [ BibTeX ]
Epitaxy on diamond by chemical vapor deposition: A route to high-quality cubic boron nitride for electronic applications. / Zhang, Wenjun; Bello, Igor; Lifshitz, Yeshayahu et al.
In: Advanced Materials, Vol. 16, No. 16, 18.08.2004.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review