Epitaxy on diamond by chemical vapor deposition : A route to high-quality cubic boron nitride for electronic applications

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Igor Bello
  • Yeshayahu Lifshitz
  • Ka Man Chan
  • Xiangmin Meng
  • Yu Wu
  • Chit Yiu Chan
  • Shui-Tong Lee

Detail(s)

Original languageEnglish
Journal / PublicationAdvanced Materials
Volume16
Issue number16
Publication statusPublished - 18 Aug 2004

Abstract

Heteroepitaxial growth of cubic boron nitride (cBN) on diamond using fluorine-assisted chemical vapor deposition is reported. Since cBN grown on diamond shows extraordinary film adhesion and stability, diamond serves as a universal intermediate layer for growing cBN films on a host of materials. The Figure illustrates the heteroepitaxial relationship between the interfacing materials, i.e, cBN-diamond and diamond-silicon.

Citation Format(s)

Epitaxy on diamond by chemical vapor deposition: A route to high-quality cubic boron nitride for electronic applications. / Zhang, Wenjun; Bello, Igor; Lifshitz, Yeshayahu et al.
In: Advanced Materials, Vol. 16, No. 16, 18.08.2004.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review