Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • Wei-Li Liu
  • Xin-Zhong Duo
  • Miao Zhang
  • Qin-Wo Shen
  • Lian-Wei Wang
  • Cheng-Lu Lin

Detail(s)

Original languageEnglish
Pages (from-to)612-613+619
Journal / PublicationGongneng Cailiao/Journal of Functional Materials
Volume32
Issue number6
Publication statusPublished - Dec 2001
Externally publishedYes

Abstract

Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross-section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF: ethanol=1:1 at the current density 10 mA/cm2 for 10 min without illumination, exhibits good quality.

Research Area(s)

  • Crystal silicon, Epitaxy, Porous silicon, Ultra-vacuum electron beam evaporation

Citation Format(s)

Epitaxy of silicon on porous silicon by ultra vacuum electron beam evaporator. / Liu, Wei-Li; Duo, Xin-Zhong; Zhang, Miao; Shen, Qin-Wo; Wang, Lian-Wei; Lin, Cheng-Lu; Zhu, Jian-Hao.

In: Gongneng Cailiao/Journal of Functional Materials, Vol. 32, No. 6, 12.2001, p. 612-613+619.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal