Epitaxial ZnS/Si core-shell nanowires and single-crystal silicon tube field-effect transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)165-170
Journal / PublicationJournal of Crystal Growth
Volume310
Issue number1
Publication statusPublished - 4 Jan 2008

Abstract

Epitaxial single-crystal ZnS/Si core-shell nanowires have been synthesized via a two-step thermal evaporation method. The epitaxial growth is due to the close match of crystal structure between zinc blende ZnS and diamond-like cubic Si. The nanowires have a uniform diameter of 80-200 nm and a length of several to several tens of micrometers. Single-crystal Si nanotubes can be obtained by chemical etching of the ZnS/Si core-shell structure. Characteristics of field-effect transistors (FETs) fabricated from the Si nanotubes suggests that the Si tubes show weak n-type semiconductivity with a mobility of about 3.7×10-2 cm2/(V s), which is 1 order larger than that of intrinsic Si. © 2007 Elsevier B.V. All rights reserved.

Research Area(s)

  • A1. Core-shell, A1. Epitaxial, A3. Nanowire, B3. FET

Citation Format(s)

Epitaxial ZnS/Si core-shell nanowires and single-crystal silicon tube field-effect transistors. / Chen, Z. H.; Tang, H.; Fan, X. et al.

In: Journal of Crystal Growth, Vol. 310, No. 1, 04.01.2008, p. 165-170.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review