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Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The growth of wafer-scale two-dimensional (2D) single crystals, especially transition metal dichalcogenides (TMDs), is significantly essential for various electronic applications. However, the growth of wafer-scale single-crystal TMD (sc-TMD) monolayers on commercial substrates still remains challenging. Recently, two works published in Nature Nanotechnology have independently reported a substrate-cutting strategy for epitaxial growth of wafer-scale sc-TMD monolayers, which might open up a new route for preparing wafer-scale sc-TMD monolayers on commercially scalable insulating substrates for future electronics.
Original languageEnglish
Pages (from-to)2405-2408
JournalMatter
Volume5
Issue number8
DOIs
Publication statusPublished - 3 Aug 2022

Funding

H.Z. thanks the support from ITC via the Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), the Research Grants Council of Hong Kong (AoE/P-701/20), the Start-Up Grant (Project No. 9380100) and the grants (Project Nos. 9680314, 9678272, 7020013 and 1886921) from the City University of Hong Kong, the Science Technology and Innovation Committee of Shenzhen Municipality (grant no. JCYJ20200109143412311, and grant no. SGDX2020110309300301, “Preparation of single atoms on transition metal chalcogenides for electrolytic hydrogen evolution”, CityU), and the Project 52131301 supported by NSFC.

RGC Funding Information

  • RGC-funded

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