Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics

Wei Zhai; Zijian Li; Li Zhai; Yao Yao; Siyuan Li; Yongji Wang; Yi Ren; Banlan Chi; Yiyao Ge; Hua Zhang

doi:10.1016/j.matt.2022.05.008

Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics

Wei Zhai, Zijian Li, Li Zhai, Yao Yao, Siyuan Li, Yongji Wang, Yi Ren, Banlan Chi, Yiyao Ge, Hua Zhang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

The growth of wafer-scale two-dimensional (2D) single crystals, especially transition metal dichalcogenides (TMDs), is significantly essential for various electronic applications. However, the growth of wafer-scale single-crystal TMD (sc-TMD) monolayers on commercial substrates still remains challenging. Recently, two works published in Nature Nanotechnology have independently reported a substrate-cutting strategy for epitaxial growth of wafer-scale sc-TMD monolayers, which might open up a new route for preparing wafer-scale sc-TMD monolayers on commercially scalable insulating substrates for future electronics.

Original language	English
Pages (from-to)	2405-2408
Journal	Matter
Volume	5
Issue number	8
DOIs	https://doi.org/10.1016/j.matt.2022.05.008
Publication status	Published - 3 Aug 2022

Funding

H.Z. thanks the support from ITC via the Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), the Research Grants Council of Hong Kong (AoE/P-701/20), the Start-Up Grant (Project No. 9380100) and the grants (Project Nos. 9680314, 9678272, 7020013 and 1886921) from the City University of Hong Kong, the Science Technology and Innovation Committee of Shenzhen Municipality (grant no. JCYJ20200109143412311, and grant no. SGDX2020110309300301, “Preparation of single atoms on transition metal chalcogenides for electrolytic hydrogen evolution”, CityU), and the Project 52131301 supported by NSFC.

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@article{56fdcead31e94f1daac0115c413579ed,

title = "Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics",

abstract = "The growth of wafer-scale two-dimensional (2D) single crystals, especially transition metal dichalcogenides (TMDs), is significantly essential for various electronic applications. However, the growth of wafer-scale single-crystal TMD (sc-TMD) monolayers on commercial substrates still remains challenging. Recently, two works published in Nature Nanotechnology have independently reported a substrate-cutting strategy for epitaxial growth of wafer-scale sc-TMD monolayers, which might open up a new route for preparing wafer-scale sc-TMD monolayers on commercially scalable insulating substrates for future electronics.",

author = "Wei Zhai and Zijian Li and Li Zhai and Yao Yao and Siyuan Li and Yongji Wang and Yi Ren and Banlan Chi and Yiyao Ge and Hua Zhang",

year = "2022",

month = aug,

day = "3",

doi = "10.1016/j.matt.2022.05.008",

language = "English",

volume = "5",

pages = "2405--2408",

number = "8",

}

TY - JOUR

T1 - Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics

AU - Zhai, Wei

AU - Li, Zijian

AU - Zhai, Li

AU - Yao, Yao

AU - Li, Siyuan

AU - Wang, Yongji

AU - Ren, Yi

AU - Chi, Banlan

AU - Ge, Yiyao

AU - Zhang, Hua

PY - 2022/8/3

Y1 - 2022/8/3

N2 - The growth of wafer-scale two-dimensional (2D) single crystals, especially transition metal dichalcogenides (TMDs), is significantly essential for various electronic applications. However, the growth of wafer-scale single-crystal TMD (sc-TMD) monolayers on commercial substrates still remains challenging. Recently, two works published in Nature Nanotechnology have independently reported a substrate-cutting strategy for epitaxial growth of wafer-scale sc-TMD monolayers, which might open up a new route for preparing wafer-scale sc-TMD monolayers on commercially scalable insulating substrates for future electronics.

AB - The growth of wafer-scale two-dimensional (2D) single crystals, especially transition metal dichalcogenides (TMDs), is significantly essential for various electronic applications. However, the growth of wafer-scale single-crystal TMD (sc-TMD) monolayers on commercial substrates still remains challenging. Recently, two works published in Nature Nanotechnology have independently reported a substrate-cutting strategy for epitaxial growth of wafer-scale sc-TMD monolayers, which might open up a new route for preparing wafer-scale sc-TMD monolayers on commercially scalable insulating substrates for future electronics.

UR - http://www.scopus.com/inward/record.url?scp=85135530911&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85135530911&origin=recordpage

U2 - 10.1016/j.matt.2022.05.008

DO - 10.1016/j.matt.2022.05.008

M3 - RGC 21 - Publication in refereed journal

SN - 2590-2393

VL - 5

SP - 2405

EP - 2408

JO - Matter

JF - Matter

IS - 8

ER -

Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics

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Epitaxial growth of wafer-scale single-crystal transition metal dichalcogenide monolayers for future electronics

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AoE(UGC)-ExtU-Lead: 2D Materials Research: Fundamentals Towards Emerging Technologies

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