Epitaxial growth of β-SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)1738-1740
Journal / PublicationJournal of Materials Research
Issue number7
Publication statusPublished - Jul 1998


Epitaxial β-SiC film has been grown on a mirror-polished Si(111) substrate using bias-assisted hot filament chemical vapor deposition (BA-HFCVD) at a substrate temperature of 1000°C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filaments, reacted with the graphite to form hydrocarbon radicals which further reacted with the silicon substrate and deposited as β-SiC. The effect of negatively biasing the substrate is the key factor for epitaxial growth. Under the same growth conditions without negative bias, polycrystalline β-SiC resulted.

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