Epitaxial growth of CdSexTe1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • F. Z. Amir
  • K. Clark
  • E. Maldonado
  • W. P. Kirk
  • J. C. Jiang
  • J. W. Ager III
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)1081-1087
Journal / PublicationJournal of Crystal Growth
Volume310
Issue number6
Publication statusPublished - 15 Mar 2008
Externally publishedYes

Abstract

CdSeTe epilayers were grown by molecular beam epitaxy on (1 0 0)-oriented vicinal silicon wafers. By controlling the growth conditions, either multiple-phase or single-phase epilayers could be deposited. In this paper we present a detailed investigation of the structure of a single-phase CdSeTe epilayer using X-ray diffraction, Rutherford back scattering, and transmission electron microscopy. Photoreflectance and photocurrent results are also presented. © 2007 Elsevier B.V. All rights reserved.

Research Area(s)

  • A3. Molecular beam epitaxy, B1. Cadmium compounds, B2. Semiconducting II-VI materials

Citation Format(s)

Epitaxial growth of CdSexTe1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures. / Amir, F. Z.; Clark, K.; Maldonado, E.; Kirk, W. P.; Jiang, J. C.; Ager III, J. W.; Yu, K. M.; Walukiewicz, W.

In: Journal of Crystal Growth, Vol. 310, No. 6, 15.03.2008, p. 1081-1087.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review