Epitaxial growth of CdSexTe1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures

F. Z. Amir; K. Clark; E. Maldonado; W. P. Kirk; J. C. Jiang; J. W. Ager III; K. M. Yu; W. Walukiewicz

doi:10.1016/j.jcrysgro.2007.12.055

Author(s)

F. Z. Amir
K. Clark
E. Maldonado
W. P. Kirk
J. C. Jiang
J. W. Ager III
W. Walukiewicz

Detail(s)

Original language	English
Pages (from-to)	1081-1087
Journal / Publication	Journal of Crystal Growth
Volume	310
Issue number	6
Publication status	Published - 15 Mar 2008
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2007.12.055 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-39649087337&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(7f78553d-6d34-470d-ab4d-5d79a432c539).html

Abstract

CdSeTe epilayers were grown by molecular beam epitaxy on (1 0 0)-oriented vicinal silicon wafers. By controlling the growth conditions, either multiple-phase or single-phase epilayers could be deposited. In this paper we present a detailed investigation of the structure of a single-phase CdSeTe epilayer using X-ray diffraction, Rutherford back scattering, and transmission electron microscopy. Photoreflectance and photocurrent results are also presented. © 2007 Elsevier B.V. All rights reserved.

Research Area(s)

A3. Molecular beam epitaxy, B1. Cadmium compounds, B2. Semiconducting II-VI materials

Citation Format(s)

[ RIS ] [ BibTeX ]

Epitaxial growth of CdSe_xTe_1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures. / Amir, F. Z.; Clark, K.; Maldonado, E. et al.
In: Journal of Crystal Growth, Vol. 310, No. 6, 15.03.2008, p. 1081-1087.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Amir, FZ, Clark, K, Maldonado, E, Kirk, WP, Jiang, JC, Ager III, JW, Yu, KM & Walukiewicz, W 2008, 'Epitaxial growth of CdSe_xTe_1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures', Journal of Crystal Growth, vol. 310, no. 6, pp. 1081-1087. https://doi.org/10.1016/j.jcrysgro.2007.12.055

Amir, F. Z., Clark, K., Maldonado, E., Kirk, W. P., Jiang, J. C., Ager III, J. W., Yu, K. M., & Walukiewicz, W. (2008). Epitaxial growth of CdSe_xTe_1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures. Journal of Crystal Growth, 310(6), 1081-1087. https://doi.org/10.1016/j.jcrysgro.2007.12.055

Amir FZ, Clark K, Maldonado E, Kirk WP, Jiang JC, Ager III JW et al. Epitaxial growth of CdSe_xTe_1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures. Journal of Crystal Growth. 2008 Mar 15;310(6):1081-1087. doi: 10.1016/j.jcrysgro.2007.12.055

Amir, F. Z. ; Clark, K. ; Maldonado, E. et al. / Epitaxial growth of CdSe_xTe_1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 6. pp. 1081-1087.