Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Ming-Yang Li
  • Yumeng Shi
  • Chia-Chin Cheng
  • Li-Syuan Lu
  • Yung-Chang Lin
  • Hao-Lin Tang
  • Meng-Lin Tsai
  • Chih-Wei Chu
  • Kung-Hwa Wei
  • Wen-Hao Chang
  • Kazu Suenaga
  • Lain-Jong Li

Detail(s)

Original languageEnglish
Pages (from-to)524-528
Journal / PublicationScience
Volume349
Issue number6247
Publication statusPublished - 31 Jul 2015
Externally publishedYes

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

Citation Format(s)

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. / Li, Ming-Yang; Shi, Yumeng; Cheng, Chia-Chin; Lu, Li-Syuan; Lin, Yung-Chang; Tang, Hao-Lin; Tsai, Meng-Lin; Chu, Chih-Wei; Wei, Kung-Hwa; He, Jr-Hau; Chang, Wen-Hao; Suenaga, Kazu; Li, Lain-Jong.

In: Science, Vol. 349, No. 6247, 31.07.2015, p. 524-528.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal