Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes

Mingshuo Zhu; Kerui Li; Siew-Chong Tan; Shu-Yuen Ron Hui

doi:10.1109/WPTCE62521.2025.11062185

Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

This paper presents a potential method to improve the efficiency of megahertz-range wireless power transfer systems. In these systems, GaN FETs are commonly used as power switches. Due to the inherent reverse conduction capability of GaN FETs, there are typically no freewheeling diodes parallelling across them. However, through analysis and experimental validation, it is found that at megahertz, paralleling low forward voltage drop Schottky freewheeling diodes can significantly reduce the temperature rise of GaN FETs, thereby effectively improving system efficiency. In this paper, we first analyze the operating principles of GaN FETs and construct a simplified equivalent model. Furthermore, through simulations and hardware experiments, we compare the efficiency of WPT systems with and without freewheeling diodes, and the effectiveness of the proposed method is validated. This study dispels the misconception that GaN FETs do not require parallel freewheeling diodes and provide a new insight for optimizing high-frequency wireless power transfer systems.

© 2025 IEEE

Original language	English
Title of host publication	2025 IEEE Wireless Power Technology Conference and Expo (WPTCE) - Proceedings
Publisher	IEEE
Number of pages	5
ISBN (Electronic)	979-8-3315-1743-4
DOIs	https://doi.org/10.1109/WPTCE62521.2025.11062185
Publication status	Published - 2025
Event	2025 IEEE Wireless Power Technology Conference and Expo (WPTCE 2025) - University of Rome “La Sapienza”, Rome, Italy Duration: 3 Jun 2025 → 6 Jun 2025 https://ieee-wptce.org/

Conference

Conference	2025 IEEE Wireless Power Technology Conference and Expo (WPTCE 2025)
Abbreviated title	WPTCE2025
Place	Italy
City	Rome
Period	3/06/25 → 6/06/25
Internet address	https://ieee-wptce.org/

Funding

This work is supported by Guangdong Basic and Applied Basic Research Foundation 2024A1515011792, the RGC Theme-based project T23-708/24-N and RGC General Research Fund 17204724. In addition, the authors would like to thank Dr. Ying Huang for her valuable discussions and assistance with PCB design.

Research Keywords

efficiency
GaN FETs
Megahertz power conversion
power semiconductor
wireless power transfer

RGC Funding Information

RGC-funded

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10.1109/WPTCE62521.2025.11062185

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@inproceedings{5609c499eba14a3485ad2f0a7583b6ba,

title = "Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes",

abstract = "This paper presents a potential method to improve the efficiency of megahertz-range wireless power transfer systems. In these systems, GaN FETs are commonly used as power switches. Due to the inherent reverse conduction capability of GaN FETs, there are typically no freewheeling diodes parallelling across them. However, through analysis and experimental validation, it is found that at megahertz, paralleling low forward voltage drop Schottky freewheeling diodes can significantly reduce the temperature rise of GaN FETs, thereby effectively improving system efficiency. In this paper, we first analyze the operating principles of GaN FETs and construct a simplified equivalent model. Furthermore, through simulations and hardware experiments, we compare the efficiency of WPT systems with and without freewheeling diodes, and the effectiveness of the proposed method is validated. This study dispels the misconception that GaN FETs do not require parallel freewheeling diodes and provide a new insight for optimizing high-frequency wireless power transfer systems. {\textcopyright} 2025 IEEE",

keywords = "efficiency, GaN FETs, Megahertz power conversion, power semiconductor, wireless power transfer",

author = "Mingshuo Zhu and Kerui Li and Siew-Chong Tan and Hui, \{Shu-Yuen Ron\}",

year = "2025",

doi = "10.1109/WPTCE62521.2025.11062185",

language = "English",

booktitle = "2025 IEEE Wireless Power Technology Conference and Expo (WPTCE) - Proceedings",

publisher = "IEEE",

address = "United States",

note = "2025 IEEE Wireless Power Technology Conference and Expo (WPTCE 2025), WPTCE2025 ; Conference date: 03-06-2025 Through 06-06-2025",

url = "https://ieee-wptce.org/",

}

Zhu, M , Li, K , Tan, S-C & Hui, S-YR 2025, Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes. in 2025 IEEE Wireless Power Technology Conference and Expo (WPTCE) - Proceedings . IEEE, 2025 IEEE Wireless Power Technology Conference and Expo (WPTCE 2025), Rome, Italy, 3/06/25. https://doi.org/10.1109/WPTCE62521.2025.11062185

Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes. / Zhu, Mingshuo ; Li, Kerui ; Tan, Siew-Chong et al.
2025 IEEE Wireless Power Technology Conference and Expo (WPTCE) - Proceedings . IEEE, 2025.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes

AU - Zhu, Mingshuo

AU - Li, Kerui

AU - Tan, Siew-Chong

AU - Hui, Shu-Yuen Ron

PY - 2025

Y1 - 2025

N2 - This paper presents a potential method to improve the efficiency of megahertz-range wireless power transfer systems. In these systems, GaN FETs are commonly used as power switches. Due to the inherent reverse conduction capability of GaN FETs, there are typically no freewheeling diodes parallelling across them. However, through analysis and experimental validation, it is found that at megahertz, paralleling low forward voltage drop Schottky freewheeling diodes can significantly reduce the temperature rise of GaN FETs, thereby effectively improving system efficiency. In this paper, we first analyze the operating principles of GaN FETs and construct a simplified equivalent model. Furthermore, through simulations and hardware experiments, we compare the efficiency of WPT systems with and without freewheeling diodes, and the effectiveness of the proposed method is validated. This study dispels the misconception that GaN FETs do not require parallel freewheeling diodes and provide a new insight for optimizing high-frequency wireless power transfer systems. © 2025 IEEE

AB - This paper presents a potential method to improve the efficiency of megahertz-range wireless power transfer systems. In these systems, GaN FETs are commonly used as power switches. Due to the inherent reverse conduction capability of GaN FETs, there are typically no freewheeling diodes parallelling across them. However, through analysis and experimental validation, it is found that at megahertz, paralleling low forward voltage drop Schottky freewheeling diodes can significantly reduce the temperature rise of GaN FETs, thereby effectively improving system efficiency. In this paper, we first analyze the operating principles of GaN FETs and construct a simplified equivalent model. Furthermore, through simulations and hardware experiments, we compare the efficiency of WPT systems with and without freewheeling diodes, and the effectiveness of the proposed method is validated. This study dispels the misconception that GaN FETs do not require parallel freewheeling diodes and provide a new insight for optimizing high-frequency wireless power transfer systems. © 2025 IEEE

KW - efficiency

KW - GaN FETs

KW - Megahertz power conversion

KW - power semiconductor

KW - wireless power transfer

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001545112700077

U2 - 10.1109/WPTCE62521.2025.11062185

DO - 10.1109/WPTCE62521.2025.11062185

M3 - RGC 32 - Refereed conference paper (with host publication)

BT - 2025 IEEE Wireless Power Technology Conference and Expo (WPTCE) - Proceedings

PB - IEEE

T2 - 2025 IEEE Wireless Power Technology Conference and Expo (WPTCE 2025)

Y2 - 3 June 2025 through 6 June 2025

ER -

Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes

Abstract

Conference

Funding

Research Keywords

RGC Funding Information

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TBRS: High-Frequency, High-Power and High-Efficiency Wireless Power Transfer Technologies

GRF: A Wireless Charging System Architecture and Control Scheme for Meeting the Paradigm Shift for the Next Generation

Cite this

Enhancing Conversion Efficiency in Megahertz Wireless Power Transfer Systems with Schottky Freewheeling Diodes

Abstract

Conference

Funding

Research Keywords

RGC Funding Information

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Projects

TBRS: High-Frequency, High-Power and High-Efficiency Wireless Power Transfer Technologies

GRF: A Wireless Charging System Architecture and Control Scheme for Meeting the Paradigm Shift for the Next Generation

Cite this