Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

4 Scopus Citations
View graph of relations

Author(s)

  • Nathan Cernetic
  • Tobias Weidner
  • Joe E. Baio
  • Hao Lu
  • Hong Ma

Detail(s)

Original languageEnglish
Pages (from-to)5376-5383
Journal / PublicationAdvanced Functional Materials
Volume25
Issue number33
Publication statusPublished - 1 Sep 2015
Externally publishedYes

Abstract

Low-voltage self-assembled monolayer field-effect transistors (SAMFETs) that operate under an applied bias of less than -3 V and a high hole mobility of 10-2 cm2 V-1 s-1 are reported. A self-assembled monolayer (SAM) with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high-voltage (AlOx/300 nm SiO2) and low-voltage (HfO2) dielectric platforms. High performance is achieved through enhanced SAM packing density via a heated assembly process and through improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methylthio head group combined with thermal annealing post gold source/drain electrode deposition to facilitate the interaction between SAM and electrode.

Research Area(s)

  • hafnium oxide, low voltage, phosphonic acid, samfet, self-assembled monolayer

Citation Format(s)

Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing. / Cernetic, Nathan; Weidner, Tobias; Baio, Joe E.; Lu, Hao; Ma, Hong; Jen, Alex K.-Y.

In: Advanced Functional Materials, Vol. 25, No. 33, 01.09.2015, p. 5376-5383.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal