Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO2 nanorods for GaN-based light-emitting diodes

Cheng-Han Ho; Yu-Hsuan Hsiao; Der-Hsien Lien; M. S. Tsai; Don Chang; Kun-Yu Lai; Ching-Cherng Sun; Jr-Hau He

doi:10.1063/1.4824848

Author(s)

Cheng-Han Ho
Yu-Hsuan Hsiao
Der-Hsien Lien
M. S. Tsai
Don Chang
Kun-Yu Lai
Ching-Cherng Sun

Detail(s)

Original language	English
Article number	161104
Journal / Publication	Applied Physics Letters
Volume	103
Issue number	16
Online published	14 Oct 2013
Publication status	Published - 14 Oct 2013
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.4824848 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84886393679&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(c466e48c-b409-43bd-936f-e99d354dc172).html

Abstract

We report an efficient light-extraction scheme employing the hierarchical structure, p-GaN microdomes/SiO₂ nanorods (NRs), on GaN light-emitting diodes (LEDs). Compared with the flat LED, the LEDs with hierarchical surfaces exhibits a light-output improvement of 36.8%. The considerable enhancement in light-extraction efficiency is attributed to the multiple tilted surfaces of microdomes and the graded refractive indexes provided by the SiO₂ NRs, reducing total internal reflection and Fresnel reflection. The enhanced optical performances are supported by the finite-difference time-domain analysis. Advances in light extraction scheme employing hierarchical structures demonstrated here pave the way to solid-state lighting technology.

Citation Format(s)

[ RIS ] [ BibTeX ]

Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO₂ nanorods for GaN-based light-emitting diodes. / Ho, Cheng-Han; Hsiao, Yu-Hsuan; Lien, Der-Hsien et al.
In: Applied Physics Letters, Vol. 103, No. 16, 161104, 14.10.2013.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Ho, C-H, Hsiao, Y-H, Lien, D-H, Tsai, MS, Chang, D, Lai, K-Y, Sun, C-C & He, J-H 2013, 'Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO₂ nanorods for GaN-based light-emitting diodes', Applied Physics Letters, vol. 103, no. 16, 161104. https://doi.org/10.1063/1.4824848

Ho, C.-H., Hsiao, Y.-H., Lien, D.-H., Tsai, M. S., Chang, D., Lai, K.-Y., Sun, C.-C., & He, J.-H. (2013). Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO₂ nanorods for GaN-based light-emitting diodes. Applied Physics Letters, 103(16), Article 161104. https://doi.org/10.1063/1.4824848

Ho CH, Hsiao YH, Lien DH, Tsai MS, Chang D, Lai KY et al. Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO₂ nanorods for GaN-based light-emitting diodes. Applied Physics Letters. 2013 Oct 14;103(16):161104. Epub 2013 Oct 14. doi: 10.1063/1.4824848

Ho, Cheng-Han ; Hsiao, Yu-Hsuan ; Lien, Der-Hsien et al. / Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO₂ nanorods for GaN-based light-emitting diodes. In: Applied Physics Letters. 2013 ; Vol. 103, No. 16.