TY - JOUR
T1 - Enhanced grain growth of phosphorus-doped polycrystalline silicon by titanium silicide formation
AU - Chou, T. C.
AU - Wong, C. Y.
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1986
Y1 - 1986
N2 - The influence of silicide reaction on the grain growth behavior of phosphorus-doped polycrystalline silicon has been studied. Intrinsic and phosphorus-doped polycrystalline silicon, with and without evaporated titanium overlayer, were prepared by low pressure chemical vapor deposition on thermally grown SiO2 on silicon wafer. These samples were then annealed in He ambient at 700°C for various time. The Rutherford backscattering spectrum showed that TiSi2 formed completely after 30 min anneal. Cross-sectional transmission electron microscopy showed that Kirkendall voids exist at the interface between TiSi2 and polycrystalline silicon, indicating that silicon is the predominant diffusing species. Enhanced grain growth as a result of silicide reaction was observed in phosphorus-doped polycrystalline silicon. The enhanced grain growth of polycrystalline silicon is suggested to be due to the redistribution of dopant, analogous to the alloying and dealloying processes in diffusion induced grain boundary migration.
AB - The influence of silicide reaction on the grain growth behavior of phosphorus-doped polycrystalline silicon has been studied. Intrinsic and phosphorus-doped polycrystalline silicon, with and without evaporated titanium overlayer, were prepared by low pressure chemical vapor deposition on thermally grown SiO2 on silicon wafer. These samples were then annealed in He ambient at 700°C for various time. The Rutherford backscattering spectrum showed that TiSi2 formed completely after 30 min anneal. Cross-sectional transmission electron microscopy showed that Kirkendall voids exist at the interface between TiSi2 and polycrystalline silicon, indicating that silicon is the predominant diffusing species. Enhanced grain growth as a result of silicide reaction was observed in phosphorus-doped polycrystalline silicon. The enhanced grain growth of polycrystalline silicon is suggested to be due to the redistribution of dopant, analogous to the alloying and dealloying processes in diffusion induced grain boundary migration.
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U2 - 10.1063/1.97331
DO - 10.1063/1.97331
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 49
SP - 1381
EP - 1383
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 20
ER -