Abstract
(002) oriented AlN thin films with a columnar microstructure fabricated by vapor phase deposition with a sample bias exhibit excellent field emission properties. The field emission current density increases with smaller film thickness, and at a thickness of 400 nm, the current density reaches 9.9 μA/cm2 and the turn-on field is close to 5 V/μm. Atomic force microscopy discloses nanoscale protrusions on the surface that greatly expand the emission area and efficiency. The Fowler-Nordheim plot reveals a linear dependence under low electric field (
| Original language | English |
|---|---|
| Article number | 251103 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 19 Jun 2006 |
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