Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO2 nanoparticles

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication2016 6th Electronic System-Integration Technology Conference, ESTC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781509014026
Publication statusPublished - 1 Dec 2016

Conference

Title6th Electronic System-Integration Technology Conference, ESTC 2016
PlaceFrance
CityGrenoble
Period13 - 16 September 2016

Abstract

The electromigration (EM) performance of pristine and ZrO2 doped Sn58Bi solder was studied using line-type structure, in order to reduce current crowding at the solder/pad interface. Cu/solder/Cu interconnects were applied with a direct current of 2.5 A, which generated a current density of 7.96×103 A/cm2, and stored in an oven at a temperature of 70 °C. After 300 hours current stressing, samples were taken out to make metallographic specimens and cross-sectioned to observe the microstructure evolution. It was found that Cu6Sn5 intermetallic compounds (IMCs) layer at both the anode and the cathode grew thicker for both pristine and ZrO2 doped Sn58Bi solders. The interfacial IMCs growth rate was found to lower down in ZrO2 doped Sn58Bi solder. The Bi grains in the matrix were also found to be refined as the average size was decreased from 15.14 μm2 to 10.31 μm2. The EM rate was decreased by 21.5% as the Bi rich layers accumulated at the anode due to current stressing were measured to be 4.65 μm and 5.92 μm for pristine and modified Sn58Bi solder, respectively. The enhanced EM reliability of ZrO2 doped Sn58Bi solder was due to the disordered orientations caused by finer microstructure, which scattered the migration of Bi atoms towards the anode more frequently. This study suggests that doping ZrO2 nanoparticles into Sn58Bi solder is an effective method to improve the EM reliability.

Research Area(s)

  • Electromigration (EM), Reliability, Sn58Bi, ZrO2 nanoparticles

Citation Format(s)

Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO2 nanoparticles. / Zhu, Ze; Li, Yi; Wu, Fengshun; Chan, Yan-Cheong.

2016 6th Electronic System-Integration Technology Conference, ESTC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7764722.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review