Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO2 nanoparticles

Ze Zhu; Yi Li; Fengshun Wu; Yan-Cheong Chan

doi:10.1109/ESTC.2016.7764722

Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO₂ nanoparticles

Ze Zhu^*
, Yi Li
, Fengshun Wu
, Yan-Cheong Chan

^*Corresponding author for this work

City University of Hong Kong

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The electromigration (EM) performance of pristine and ZrO₂ doped Sn58Bi solder was studied using line-type structure, in order to reduce current crowding at the solder/pad interface. Cu/solder/Cu interconnects were applied with a direct current of 2.5 A, which generated a current density of 7.96×10³ A/cm², and stored in an oven at a temperature of 70 °C. After 300 hours current stressing, samples were taken out to make metallographic specimens and cross-sectioned to observe the microstructure evolution. It was found that Cu₆Sn₅ intermetallic compounds (IMCs) layer at both the anode and the cathode grew thicker for both pristine and ZrO₂ doped Sn58Bi solders. The interfacial IMCs growth rate was found to lower down in ZrO₂ doped Sn58Bi solder. The Bi grains in the matrix were also found to be refined as the average size was decreased from 15.14 μm² to 10.31 μm². The EM rate was decreased by 21.5% as the Bi rich layers accumulated at the anode due to current stressing were measured to be 4.65 μm and 5.92 μm for pristine and modified Sn58Bi solder, respectively. The enhanced EM reliability of ZrO₂ doped Sn58Bi solder was due to the disordered orientations caused by finer microstructure, which scattered the migration of Bi atoms towards the anode more frequently. This study suggests that doping ZrO₂ nanoparticles into Sn58Bi solder is an effective method to improve the EM reliability.

Original language	English
Title of host publication	2016 6th Electronic System-Integration Technology Conference, ESTC 2016
Publisher	IEEE
ISBN (Print)	9781509014026
DOIs	https://doi.org/10.1109/ESTC.2016.7764722
Publication status	Published - 1 Dec 2016
Event	6th Electronic System-Integration Technology Conference, ESTC 2016 - Grenoble, France Duration: 13 Sept 2016 → 16 Sept 2016 http://WWW.estc2016.eu

Conference

Conference	6th Electronic System-Integration Technology Conference, ESTC 2016
Place	France
City	Grenoble
Period	13/09/16 → 16/09/16
Internet address	http://WWW.estc2016.eu

Funding

The authors would like to acknowledge the financial support provided by the National Natural Science Foundation of China/Research Grants Council of Hong Kong (NSFC/RGC), Ref. No. 9054008 (Electromigration and Thermomigration Studies in Nanostructured Composite Electronic Interconnects for Nanoelectronics Applications), and the Research Grants Council of Hong Kong, Ref. No. 9041636 (A Study of Nanostructured Electronic Interconnects-preparation, Characterization and Integration).

Research Keywords

Electromigration (EM)
Reliability
Sn58Bi
ZrO2 nanoparticles

Access Output

10.1109/ESTC.2016.7764722

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Cite this

@inproceedings{8b07695f8b1d4c9abfcda4c6aefa21b1,

title = "Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO2 nanoparticles",

abstract = "The electromigration (EM) performance of pristine and ZrO2 doped Sn58Bi solder was studied using line-type structure, in order to reduce current crowding at the solder/pad interface. Cu/solder/Cu interconnects were applied with a direct current of 2.5 A, which generated a current density of 7.96×103 A/cm2, and stored in an oven at a temperature of 70 °C. After 300 hours current stressing, samples were taken out to make metallographic specimens and cross-sectioned to observe the microstructure evolution. It was found that Cu6Sn5 intermetallic compounds (IMCs) layer at both the anode and the cathode grew thicker for both pristine and ZrO2 doped Sn58Bi solders. The interfacial IMCs growth rate was found to lower down in ZrO2 doped Sn58Bi solder. The Bi grains in the matrix were also found to be refined as the average size was decreased from 15.14 μm2 to 10.31 μm2. The EM rate was decreased by 21.5\% as the Bi rich layers accumulated at the anode due to current stressing were measured to be 4.65 μm and 5.92 μm for pristine and modified Sn58Bi solder, respectively. The enhanced EM reliability of ZrO2 doped Sn58Bi solder was due to the disordered orientations caused by finer microstructure, which scattered the migration of Bi atoms towards the anode more frequently. This study suggests that doping ZrO2 nanoparticles into Sn58Bi solder is an effective method to improve the EM reliability.",

keywords = "Electromigration (EM), Reliability, Sn58Bi, ZrO2 nanoparticles",

author = "Ze Zhu and Yi Li and Fengshun Wu and Yan-Cheong Chan",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/ESTC.2016.7764722",

language = "English",

isbn = "9781509014026",

booktitle = "2016 6th Electronic System-Integration Technology Conference, ESTC 2016",

publisher = "IEEE",

address = "United States",

note = "6th Electronic System-Integration Technology Conference, ESTC 2016 ; Conference date: 13-09-2016 Through 16-09-2016",

url = "http://WWW.estc2016.eu",

}

Zhu, Z, Li, Y, Wu, F & Chan, Y-C 2016, Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO₂ nanoparticles. in 2016 6th Electronic System-Integration Technology Conference, ESTC 2016., 7764722, IEEE, 6th Electronic System-Integration Technology Conference, ESTC 2016, Grenoble, France, 13/09/16. https://doi.org/10.1109/ESTC.2016.7764722

Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO₂ nanoparticles. / Zhu, Ze; Li, Yi; Wu, Fengshun et al.
2016 6th Electronic System-Integration Technology Conference, ESTC 2016. IEEE, 2016. 7764722.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Enhanced electromigration (EM) reliability of Sn58Bi solder due to the incorporation of ZrO2 nanoparticles

AU - Zhu, Ze

AU - Li, Yi

AU - Wu, Fengshun

AU - Chan, Yan-Cheong

PY - 2016/12/1

Y1 - 2016/12/1

N2 - The electromigration (EM) performance of pristine and ZrO2 doped Sn58Bi solder was studied using line-type structure, in order to reduce current crowding at the solder/pad interface. Cu/solder/Cu interconnects were applied with a direct current of 2.5 A, which generated a current density of 7.96×103 A/cm2, and stored in an oven at a temperature of 70 °C. After 300 hours current stressing, samples were taken out to make metallographic specimens and cross-sectioned to observe the microstructure evolution. It was found that Cu6Sn5 intermetallic compounds (IMCs) layer at both the anode and the cathode grew thicker for both pristine and ZrO2 doped Sn58Bi solders. The interfacial IMCs growth rate was found to lower down in ZrO2 doped Sn58Bi solder. The Bi grains in the matrix were also found to be refined as the average size was decreased from 15.14 μm2 to 10.31 μm2. The EM rate was decreased by 21.5% as the Bi rich layers accumulated at the anode due to current stressing were measured to be 4.65 μm and 5.92 μm for pristine and modified Sn58Bi solder, respectively. The enhanced EM reliability of ZrO2 doped Sn58Bi solder was due to the disordered orientations caused by finer microstructure, which scattered the migration of Bi atoms towards the anode more frequently. This study suggests that doping ZrO2 nanoparticles into Sn58Bi solder is an effective method to improve the EM reliability.

AB - The electromigration (EM) performance of pristine and ZrO2 doped Sn58Bi solder was studied using line-type structure, in order to reduce current crowding at the solder/pad interface. Cu/solder/Cu interconnects were applied with a direct current of 2.5 A, which generated a current density of 7.96×103 A/cm2, and stored in an oven at a temperature of 70 °C. After 300 hours current stressing, samples were taken out to make metallographic specimens and cross-sectioned to observe the microstructure evolution. It was found that Cu6Sn5 intermetallic compounds (IMCs) layer at both the anode and the cathode grew thicker for both pristine and ZrO2 doped Sn58Bi solders. The interfacial IMCs growth rate was found to lower down in ZrO2 doped Sn58Bi solder. The Bi grains in the matrix were also found to be refined as the average size was decreased from 15.14 μm2 to 10.31 μm2. The EM rate was decreased by 21.5% as the Bi rich layers accumulated at the anode due to current stressing were measured to be 4.65 μm and 5.92 μm for pristine and modified Sn58Bi solder, respectively. The enhanced EM reliability of ZrO2 doped Sn58Bi solder was due to the disordered orientations caused by finer microstructure, which scattered the migration of Bi atoms towards the anode more frequently. This study suggests that doping ZrO2 nanoparticles into Sn58Bi solder is an effective method to improve the EM reliability.

KW - Electromigration (EM)

KW - Reliability

KW - Sn58Bi

KW - ZrO2 nanoparticles

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U2 - 10.1109/ESTC.2016.7764722

DO - 10.1109/ESTC.2016.7764722

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781509014026

BT - 2016 6th Electronic System-Integration Technology Conference, ESTC 2016

PB - IEEE

T2 - 6th Electronic System-Integration Technology Conference, ESTC 2016

Y2 - 13 September 2016 through 16 September 2016

ER -