Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Yi-Ting Tseng
  • I-Chieh Chen
  • Ting-Chang Chang
  • Chih-Cheng Shih
  • Hao-Xuan Zheng
  • Wen-Chung Chen
  • Ming-Hui Wang
  • Wei-Chen Huang
  • Min-Chen Chen
  • Xiao-Hua Ma
  • Yue Hao
  • Simon M. Sze

Detail(s)

Original languageEnglish
Article number053501
Journal / PublicationApplied Physics Letters
Volume113
Issue number5
Online published30 Jul 2018
Publication statusPublished - 30 Jul 2018

Abstract

In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a retention test indicated better stability and a resistive switching window of at least an order. The switching time of the Ag-Cu alloy CBRAM is shorter than that of both Ag and Cu electrode CBRAMs under fast current-voltage (fast I-V). The experimental result indicated that the mechanism was dominated by the galvanic effect. Active atoms (Ag) captured electrons of inactive atoms (Cu) and generated metallic ions (Cu ions) in the alloy electrode. Cu ions drifted into the insulator and generated a conductive path when applying voltage bias. The use of this alloy as an electrode in CBRAM can significantly decrease forming voltage and enhance CBRAM characteristics.

Citation Format(s)

Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. / Tseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang; Huang, J. C.; Shih, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Wang, Ming-Hui; Huang, Wei-Chen; Chen, Min-Chen; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.

In: Applied Physics Letters, Vol. 113, No. 5, 053501, 30.07.2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal