Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory

Yi-Ting Tseng; I-Chieh Chen; Ting-Chang Chang; J. C. Huang; Chih-Cheng Shih; Hao-Xuan Zheng; Wen-Chung Chen; Ming-Hui Wang; Wei-Chen Huang; Min-Chen Chen; Xiao-Hua Ma; Yue Hao; Simon M. Sze

doi:10.1063/1.5023527

Author(s)

Yi-Ting Tseng
I-Chieh Chen
Ting-Chang Chang
Chih-Cheng Shih
Hao-Xuan Zheng
Wen-Chung Chen
Ming-Hui Wang
Wei-Chen Huang
Min-Chen Chen
Xiao-Hua Ma
Yue Hao
Simon M. Sze

Related Research Unit(s)

Detail(s)

Original language	English
Article number	053501
Journal / Publication	Applied Physics Letters
Volume	113
Issue number	5
Online published	30 Jul 2018
Publication status	Published - 30 Jul 2018

Link(s)

DOI	DOI https://doi.org/10.1063/1.5023527 Final Published version
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Attachment(s)	Documents 25283403.pdf Final Published version, 2.52 MB, PDF Publisher's Copyright Statement This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yi-Ting Tseng, I-Chieh Chen, Ting-Chang Chang, J. C. Huang, Chih-Cheng Shih, Hao-Xuan Zheng, Wen-Chung Chen, Ming-Hui Wang, Wei-Chen Huang, Min-Chen Chen, Xiao-Hua Ma, Yue Hao, and Simon M. Sze , "Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory", Appl. Phys. Lett. 113, 053501 (2018) and may be found at https://doi.org/10.1063/1.5023527.
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Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(573d9813-2748-43a3-bbbf-7aeda47d4770).html

Abstract

In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a retention test indicated better stability and a resistive switching window of at least an order. The switching time of the Ag-Cu alloy CBRAM is shorter than that of both Ag and Cu electrode CBRAMs under fast current-voltage (fast I-V). The experimental result indicated that the mechanism was dominated by the galvanic effect. Active atoms (Ag) captured electrons of inactive atoms (Cu) and generated metallic ions (Cu ions) in the alloy electrode. Cu ions drifted into the insulator and generated a conductive path when applying voltage bias. The use of this alloy as an electrode in CBRAM can significantly decrease forming voltage and enhance CBRAM characteristics.

Research Area(s)

Citation Format(s)

[ RIS ] [ BibTeX ]

Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. / Tseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang et al.

In: Applied Physics Letters, Vol. 113, No. 5, 053501, 30.07.2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Tseng, Y-T, Chen, I-C, Chang, T-C, Huang, JC, Shih, C-C, Zheng, H-X, Chen, W-C, Wang, M-H, Huang, W-C, Chen, M-C, Ma, X-H, Hao, Y & Sze, SM 2018, 'Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory', Applied Physics Letters, vol. 113, no. 5, 053501. https://doi.org/10.1063/1.5023527

Tseng, Y-T., Chen, I-C., Chang, T-C., Huang, J. C., Shih, C-C., Zheng, H-X., Chen, W-C., Wang, M-H., Huang, W-C., Chen, M-C., Ma, X-H., Hao, Y., & Sze, S. M. (2018). Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. Applied Physics Letters, 113(5), [053501]. https://doi.org/10.1063/1.5023527

Tseng Y-T, Chen I-C, Chang T-C, Huang JC, Shih C-C, Zheng H-X et al. Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. Applied Physics Letters. 2018 Jul 30;113(5):053501. Epub 2018 Jul 30. doi: 10.1063/1.5023527

Tseng, Yi-Ting ; Chen, I-Chieh ; Chang, Ting-Chang et al. / Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory. In: Applied Physics Letters. 2018 ; Vol. 113, No. 5.

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