Enhanced dielectric tunability properties of Ba(ZrxTi1-x)O3 thin films using seed layers on Pt/Ti/SiO2/Si substrates

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jiwei Zhai
  • Cheng Gao
  • Xi Yao
  • Zhengkui Xu
  • Haydn Chen

Detail(s)

Original languageEnglish
Pages (from-to)905-910
Journal / PublicationCeramics International
Volume34
Issue number4
Publication statusPublished - May 2008

Abstract

The compositionally graded and homogeneous Ba(ZrxTi1-x)O3 (BZT) thin films were fabricated on LaNiO3 (LNO) buffered Pt/Ti/SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel deposition method, respectively. These films crystallized into a single perovskite phase. The BZT thin films deposited on LaNiO3/Pt/Ti/SiO2/Si substrates had a highly (1 0 0) preferred orientation and exhibited a preferred (1 1 0) orientation when the thin films were deposited on Pt/Ti/SiO2/Si substrates. The LNO and Ba(Zr0.30Ti0.70) served as seed layer on Pt/Ti/SiO2/Si substrates and analyze the relationship of seed layer, microstructure and dielectric behavior of the thin films. The compositionally graded thin films from BaTiO3 to BaZr0.35Ti0.65O3 were fabricated on LNO/Pt/Ti/SiO2/Si substrates. The tunability behavior of compositionally graded films was analyzed in order to produce optimum effective dielectric properties. The dielectric constant of BaZrxTi1-xO3 compositionally graded thin films showed weak temperature dependence. This kind of thin films has a potential in a fabrication of a temperature stable tunable device. © 2007 Elsevier Ltd and Techna Group S.r.l.

Research Area(s)

  • A. Films, A. Sol-gel processes, C. Dielectric properties, Microstructure

Citation Format(s)

Enhanced dielectric tunability properties of Ba(ZrxTi1-x)O3 thin films using seed layers on Pt/Ti/SiO2/Si substrates. / Zhai, Jiwei; Gao, Cheng; Yao, Xi; Xu, Zhengkui; Chen, Haydn.

In: Ceramics International, Vol. 34, No. 4, 05.2008, p. 905-910.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review