Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO 3 buffer layer

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Original languageEnglish
Article number117307
Journal / PublicationChinese Physics B
Issue number11
Publication statusPublished - Nov 2012
Externally publishedYes


A top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1′-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO 3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO 3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO 3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.  

Research Area(s)

  • contact resistance, heterojunction structure, MoO 3 buffer layer, organic field-effect transistor (OFET)