Engineering the electronic band structure for multiband solar cells

N. López, L. A. Reichertz, K. M. Yu, K. Campman, W. Walukiewicz

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

292 Citations (Scopus)

Abstract

Using the unique features of the electronic band structure of GaN xAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications. © 2011 The American Physical Society.
Original languageEnglish
Article number28701
JournalPhysical Review Letters
Volume106
Issue number2
DOIs
Publication statusPublished - 2011
Externally publishedYes

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