TY - JOUR
T1 - Engineering the electronic band structure for multiband solar cells
AU - López, N.
AU - Reichertz, L. A.
AU - Yu, K. M.
AU - Campman, K.
AU - Walukiewicz, W.
PY - 2011
Y1 - 2011
N2 - Using the unique features of the electronic band structure of GaN xAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications. © 2011 The American Physical Society.
AB - Using the unique features of the electronic band structure of GaN xAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications. © 2011 The American Physical Society.
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U2 - 10.1103/PhysRevLett.106.028701
DO - 10.1103/PhysRevLett.106.028701
M3 - RGC 21 - Publication in refereed journal
SN - 0031-9007
VL - 106
JO - Physical Review Letters
JF - Physical Review Letters
IS - 2
M1 - 28701
ER -