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"energy Selection Channels" for High-Performance Electrolyte: Anion-Frenkel Defect Pair as Dominant Source for O Ion Conductions in Pyrochlore-type Lanthanide Hafnium Oxides SOFC

  • Mingzi Sun
  • , Bolong Huang*
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The excellent ion conductivities of pyrochlore-type materials are believed to be based on oxygen anion transportations caused by the intrinsic defects, in which the anion Frenkel (a-Fr) pair (VO+IO) defect is the most stable one that lacks detailed study. The partially disordered pyrochlore with formation of the a-Fr pair defect will result in more disorder in local pyrochlore structure and increase number of possible migration paths for oxygen anions, which could further improve the ion conductivities of materials. Hence, we studied the formation of a-Fr defect pairs in La2Hf2O7 as a representative pyrochlore structure by density functional theory (DFT) calculations. Three types of defect migration sites were discovered with the ability to incorporate interstitial oxygen atoms from 48f sites and form a-Fr defect pairs (IO+VO (48f)). Besides the most stable vacant 8a sites with lowest defect formation energy of 3.49 eV/pair, two other novel migration sites have been first reported with ability to form a-Fr pair defect with formation energies of 6.53 and 8.49 eV/pair, respectively. These two new types of migration path, as intermediate sites, could construct a diffuse channel with vacant 8a site for interstitial oxygen anions diffusion in the lattice and significantly decrease the distance and barrier of each jump for oxygen atoms. In contrast with the oxygen interstitial defects, the formation of a-Fr pair defect shows higher priority because of much lower formation energies. Since oxygen anions could be easier to generate and diffuse in the pyrochlore structure, the a-Fr pair defect can be explained as the origin of excellent ion conductivities of pyrochlore materials. This work provides a detailed understanding of relationship between intrinsic defects and electronic properties, which enable us to predict electronic properties of other pyrochlore-type materials in the future study. © 2017 American Chemical Society.
Original languageEnglish
Pages (from-to)7975-7984
JournalInorganic Chemistry
Volume56
Issue number14
DOIs
Publication statusPublished - 17 Jul 2017
Externally publishedYes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

B.H. gratefully acknowledges the support of the Natural Science Foundation of China (NSFC) for the Youth Scientist grant (Grant No. NSFC 11504309), the initial start-up grant support from the Department General Research Fund (Dept. GRF) from ABCT in the Hong Kong Polytechnic Univ. (PolyU), and the Early Career Scheme (ECS) fund (Grant No. PolyU 253026/16P) from the Research Grant Council (RGC) in Hong Kong. This work is supported by the high-performance supercomputer (ATOM-project) in Dept. of ABCT of PolyU.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

RGC Funding Information

  • RGC-funded

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