Energy band engineering and controlled p-type conductivity of CuAlO 2 thin films by nonisovalent Cu-O alloying

Z. Q. Yao; B. He; L. Zhang; C. Q. Zhuang; T. W. Ng; S. L. Liu; M. Vogel; A. Kumar; W. J. Zhang; C. S. Lee; S. T. Lee; X. Jiang

doi:10.1063/1.3683499

Energy band engineering and controlled p-type conductivity of CuAlO 2 thin films by nonisovalent Cu-O alloying

Z. Q. Yao, B. He, L. Zhang, C. Q. Zhuang, T. W. Ng, S. L. Liu, M. Vogel, A. Kumar, W. J. Zhang, C. S. Lee, S. T. Lee, X. Jiang

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

53 Citations (Scopus)

Abstract

The electronic band structure and p-type conductivity of CuAlO ₂ films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu ⁺ 3d ¹⁰ with Cu ²⁺ 3d ⁹ orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO ₂ host. The Cu-O/CuAlO ₂ alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46-3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3-39.5 cm ²/Vs) achieved thus far for CuAlO ₂ thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO ₂ films were presented, and the devices showed pronounced performance with I _on/I _off of ∼8.0 × 10 ² and field effect mobility of 0.97 cm ²/Vs. © 2012 American Institute of Physics.

Original language	English
Article number	62102
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3683499
Publication status	Published - 6 Feb 2012

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@article{9affa02838fc469ba33d4e191378ca92,

title = "Energy band engineering and controlled p-type conductivity of CuAlO 2 thin films by nonisovalent Cu-O alloying",

abstract = "The electronic band structure and p-type conductivity of CuAlO 2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu + 3d 10 with Cu 2+ 3d 9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO 2 host. The Cu-O/CuAlO 2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46-3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3-39.5 cm 2/Vs) achieved thus far for CuAlO 2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO 2 films were presented, and the devices showed pronounced performance with I on/I off of ∼8.0 × 10 2 and field effect mobility of 0.97 cm 2/Vs. {\textcopyright} 2012 American Institute of Physics.",

author = "Yao, {Z. Q.} and B. He and L. Zhang and Zhuang, {C. Q.} and Ng, {T. W.} and Liu, {S. L.} and M. Vogel and A. Kumar and Zhang, {W. J.} and Lee, {C. S.} and Lee, {S. T.} and X. Jiang",

year = "2012",

month = feb,

day = "6",

doi = "10.1063/1.3683499",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Energy band engineering and controlled p-type conductivity of CuAlO 2 thin films by nonisovalent Cu-O alloying

AU - Yao, Z. Q.

AU - He, B.

AU - Zhang, L.

AU - Zhuang, C. Q.

AU - Ng, T. W.

AU - Liu, S. L.

AU - Vogel, M.

AU - Kumar, A.

AU - Zhang, W. J.

AU - Lee, C. S.

AU - Lee, S. T.

AU - Jiang, X.

PY - 2012/2/6

Y1 - 2012/2/6

N2 - The electronic band structure and p-type conductivity of CuAlO 2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu + 3d 10 with Cu 2+ 3d 9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO 2 host. The Cu-O/CuAlO 2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46-3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3-39.5 cm 2/Vs) achieved thus far for CuAlO 2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO 2 films were presented, and the devices showed pronounced performance with I on/I off of ∼8.0 × 10 2 and field effect mobility of 0.97 cm 2/Vs. © 2012 American Institute of Physics.

AB - The electronic band structure and p-type conductivity of CuAlO 2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu + 3d 10 with Cu 2+ 3d 9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO 2 host. The Cu-O/CuAlO 2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46-3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3-39.5 cm 2/Vs) achieved thus far for CuAlO 2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO 2 films were presented, and the devices showed pronounced performance with I on/I off of ∼8.0 × 10 2 and field effect mobility of 0.97 cm 2/Vs. © 2012 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=84863158641&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84863158641&origin=recordpage

U2 - 10.1063/1.3683499

DO - 10.1063/1.3683499

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 62102

ER -

Energy band engineering and controlled p-type conductivity of CuAlO 2 thin films by nonisovalent Cu-O alloying

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