TY - CHAP
T1 - Energetic Beam Synthesis of Dilute Nitrides and Related Alloys
AU - Yu, K.M.
AU - Scarpulla, M.A.
AU - Shan, W.
AU - Wu, J.
AU - Beeman, J.W.
AU - Jasinski, J.
AU - Liliental-Weber, Z.
AU - Dubón, O.D.
AU - Walukiewicz, W.
PY - 2008
Y1 - 2008
N2 - Group III–V dilute nitrides, III-Nx−V1−x (with x up to 0.10) have exhibited many unusual properties as compared to conventional semiconductor alloys. Here we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III−Nx−V1−x alloys including GaNx As1−x, InNxP1−x, AlyGa1−yNxAs1−x, and GaNxAs1−x−yPy has been synthesized and their optical properties investigated. In particular, ion implantation followed by PLM has been successful in forming thermally stable thin films of GaNxAs1−x with x as high as 0.016 and structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. Using the implantation, PLM technique group II–VI dilute oxide (II−O−VI) semiconductors, a direct analogue of the III–V diluted nitrides, have also been formed. In Zn1-xMnxTe, where the O level lies below the conduction band edge, it was demonstrated that incorporation of a small amount of oxygen leads to the formation of a narrow, oxygen-derived band of extended states located well below the conduction band edge of the ZnMnTe matrix. The three absorption edges of this material (̃0.73, 1.83, and 2.56 eV) cover the entire solar spectrum providing a material envisioned for the multiband, single junction, high-efficiency photovoltaic devices.
AB - Group III–V dilute nitrides, III-Nx−V1−x (with x up to 0.10) have exhibited many unusual properties as compared to conventional semiconductor alloys. Here we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III−Nx−V1−x alloys including GaNx As1−x, InNxP1−x, AlyGa1−yNxAs1−x, and GaNxAs1−x−yPy has been synthesized and their optical properties investigated. In particular, ion implantation followed by PLM has been successful in forming thermally stable thin films of GaNxAs1−x with x as high as 0.016 and structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. Using the implantation, PLM technique group II–VI dilute oxide (II−O−VI) semiconductors, a direct analogue of the III–V diluted nitrides, have also been formed. In Zn1-xMnxTe, where the O level lies below the conduction band edge, it was demonstrated that incorporation of a small amount of oxygen leads to the formation of a narrow, oxygen-derived band of extended states located well below the conduction band edge of the ZnMnTe matrix. The three absorption edges of this material (̃0.73, 1.83, and 2.56 eV) cover the entire solar spectrum providing a material envisioned for the multiband, single junction, high-efficiency photovoltaic devices.
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U2 - 10.1007/978-3-540-74529-7_1
DO - 10.1007/978-3-540-74529-7_1
M3 - RGC 12 - Chapter in an edited book (Author)
SN - 978-3-540-74528-0
T3 - Springer Series in Materials Science
SP - 1
EP - 34
BT - Dilute III-V Nitride Semiconductors and Material Systems
A2 - Erol , Ayse
PB - Springer Berlin Heidelberg
ER -
