Encapsulation of silver via nitridation of Ag/Ti bilayer structures
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 355-360 |
| Journal / Publication | Materials Research Society Symposium - Proceedings |
| Volume | 427 |
| Publication status | Published - 1996 |
| Externally published | Yes |
Conference
| Title | Proceedings of the 1996 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 8 - 12 April 1996 |
Link(s)
Abstract
Ag/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of approximately 2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.
Bibliographic Note
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Citation Format(s)
Encapsulation of silver via nitridation of Ag/Ti bilayer structures. / Zou, Y. L.; Alford, T. L.; Adams, D. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 427, 1996, p. 355-360.
In: Materials Research Society Symposium - Proceedings, Vol. 427, 1996, p. 355-360.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
