Emitter structure design of near-infrared quantum dot light-emitting devices

Wenxu Yin, Xiaoyu Zhang*, Xuyong Yang, Andrey L. Rogach*, Weitao Zheng*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

8 Citations (Scopus)

Abstract

Near-infrared (NIR) emitters are indispensable for telecommunication and medical applications. Colloidal semiconductor quantum dots offer plenty of advantages for NIR light-emitting diodes (LEDs) thanks to their size-dependent emission, high exciton binding energy, and low-cost solution processing. Here, we summarize the recent progress in the development of NIR quantum dot LEDs, focusing on how their device structure and emitter properties facilitate improvement of device performance. The challenges and opportunities associated with NIR quantum dot LEDs such as achieving the proper balance between the charge transport and exciton formation, enhancement of device stability, and improvement of device outcoupling efficiency are discussed. © 2023 Elsevier Ltd
Original languageEnglish
Pages (from-to)446-467
JournalMaterials Today
Volume67
Online published1 Jul 2023
DOIs
Publication statusPublished - Jul 2023

Research Keywords

  • Colloidal quantum dots
  • Electroluminescence
  • Light-emitting diodes
  • Near-infrared emitters

Publisher's Copyright Statement

  • COPYRIGHT TERMS OF DEPOSITED POSTPRINT FILE: © 2023. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/.

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