Emission of 1.38 μm and gain properties from Ho3+-doped low-phonon-energy gallate bismuth lead oxide glasses for fiber-optic amplifiers
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Original language | English |
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Pages (from-to) | 211-213 |
Journal / Publication | Optics Letters |
Volume | 35 |
Issue number | 2 |
Publication status | Published - 15 Jan 2010 |
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Abstract
Efficient emission at 1.38 μm wavelength from holmium (Ho 3+)-doped low-phonon-energy gallate bismuth lead (GBL) oxide glasses, owing to the Ho3+: (5S2,5F 4)→5I5 transition, was observed, and the stimulated emission cross section was calculated to be 2.4 × 10 -21 cm2. Population inversions between the ( 5S2,5F4) and 5I 5 levels have been achieved, and a broad gain bandwidth from 1350 to 1450 nm was obtained. The large product of emission cross section and measured lifetime also support this characteristic. The results indicate that a Ho 3+-doped GBL glass system is a promising candidate for the development of E-band (1360-1460 nm) fiber-optic amplifiers. © 2010 Optical Society of America.
Citation Format(s)
Emission of 1.38 μm and gain properties from Ho3+-doped low-phonon-energy gallate bismuth lead oxide glasses for fiber-optic amplifiers. / Zhou, Bo; Lin, Hai; Yang, Dianlai et al.
In: Optics Letters, Vol. 35, No. 2, 15.01.2010, p. 211-213.
In: Optics Letters, Vol. 35, No. 2, 15.01.2010, p. 211-213.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review